Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

C. Zhao, Y.H. Chen, M. Zhao, C.L. Zhang, B. Xu, L.K. Yu, J. Sun, Wen Lei, Z.G. Wang

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	31-35
Journal	Materials Science in Semiconductor Processing
Volume	9
Publication status	Published - 2006
Externally published	Yes

Cite this

@article{3e4a9220bdf24cc4bf05d738d09fe3f9,

title = "Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth",

author = "C. Zhao and Y.H. Chen and M. Zhao and C.L. Zhang and B. Xu and L.K. Yu and J. Sun and Wen Lei and Z.G. Wang",

year = "2006",

language = "English",

volume = "9",

pages = "31--35",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier",

}

TY - JOUR

T1 - Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

AU - Zhao, C.

AU - Chen, Y.H.

AU - Zhao, M.

AU - Zhang, C.L.

AU - Xu, B.

AU - Yu, L.K.

AU - Sun, J.

AU - Lei, Wen

AU - Wang, Z.G.

PY - 2006

Y1 - 2006

M3 - Article

VL - 9

SP - 31

EP - 35

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -