Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

Charlie C. Musca; J. Antoszewski; K. J. Winchester; A. J. Keating; T. Nguyen; K. K.M.B.D. Silva; J. M. Dell; L. Faraone; P. Mitra; J. D. Beck; M. R. Skokan; J. E. Robinson

doi:10.1109/LED.2005.859651

Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

Charlie C. Musca, J. Antoszewski, K. J. Winchester, A. J. Keating, T. Nguyen, K. K.M.B.D. Silva, J. M. Dell, L. Faraone, P. Mitra, J. D. Beck, M. R. Skokan, J. E. Robinson

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65 Citations (Scopus)

Abstract

The monolithic integration of a low-temperature microelectromechanical system (MEMS) and HgCdTe infrared detector technology has been implemented and characterized. The MEMS-based tunable optical filter, integrated with an infrared detector, selects narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The entire fabrication process is compatible with two-dimensional infrared focal plane array technology. The fabricated device consists of an HgCdTe SWIR photoconductor, two distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity, which is then removed to leave an air gap, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors shows a wide tuning range, and high percentage transmission is achieved with a tuning voltage of only 7.5 V. The full-width at half-maximum ranged from 95 to 105 nm over a tuning range of 2.2-1.85 μm.

Original language	English
Pages (from-to)	888-890
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	12
DOIs	https://doi.org/10.1109/LED.2005.859651
Publication status	Published - Dec 2005

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title = "Monolithic integration of an infrared photon detector with a MEMS-based tunable filter",

abstract = "The monolithic integration of a low-temperature microelectromechanical system (MEMS) and HgCdTe infrared detector technology has been implemented and characterized. The MEMS-based tunable optical filter, integrated with an infrared detector, selects narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The entire fabrication process is compatible with two-dimensional infrared focal plane array technology. The fabricated device consists of an HgCdTe SWIR photoconductor, two distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity, which is then removed to leave an air gap, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors shows a wide tuning range, and high percentage transmission is achieved with a tuning voltage of only 7.5 V. The full-width at half-maximum ranged from 95 to 105 nm over a tuning range of 2.2-1.85 μm.",

keywords = "Bragg, Detectors, Infrared (IR), Microelectromechanical system (MEMS), Silicon nitride, Tunable",

author = "Musca, {Charlie C.} and J. Antoszewski and Winchester, {K. J.} and Keating, {A. J.} and T. Nguyen and Silva, {K. K.M.B.D.} and Dell, {J. M.} and L. Faraone and P. Mitra and Beck, {J. D.} and Skokan, {M. R.} and Robinson, {J. E.}",

year = "2005",

month = dec,

doi = "10.1109/LED.2005.859651",

language = "English",

volume = "26",

pages = "888--890",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

number = "12",

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T1 - Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

AU - Musca, Charlie C.

AU - Antoszewski, J.

AU - Winchester, K. J.

AU - Keating, A. J.

AU - Nguyen, T.

AU - Silva, K. K.M.B.D.

AU - Dell, J. M.

AU - Faraone, L.

AU - Mitra, P.

AU - Beck, J. D.

AU - Skokan, M. R.

AU - Robinson, J. E.

PY - 2005/12

Y1 - 2005/12

N2 - The monolithic integration of a low-temperature microelectromechanical system (MEMS) and HgCdTe infrared detector technology has been implemented and characterized. The MEMS-based tunable optical filter, integrated with an infrared detector, selects narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The entire fabrication process is compatible with two-dimensional infrared focal plane array technology. The fabricated device consists of an HgCdTe SWIR photoconductor, two distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity, which is then removed to leave an air gap, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors shows a wide tuning range, and high percentage transmission is achieved with a tuning voltage of only 7.5 V. The full-width at half-maximum ranged from 95 to 105 nm over a tuning range of 2.2-1.85 μm.

AB - The monolithic integration of a low-temperature microelectromechanical system (MEMS) and HgCdTe infrared detector technology has been implemented and characterized. The MEMS-based tunable optical filter, integrated with an infrared detector, selects narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The entire fabrication process is compatible with two-dimensional infrared focal plane array technology. The fabricated device consists of an HgCdTe SWIR photoconductor, two distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity, which is then removed to leave an air gap, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors shows a wide tuning range, and high percentage transmission is achieved with a tuning voltage of only 7.5 V. The full-width at half-maximum ranged from 95 to 105 nm over a tuning range of 2.2-1.85 μm.

KW - Bragg

KW - Detectors

KW - Infrared (IR)

KW - Microelectromechanical system (MEMS)

KW - Silicon nitride

KW - Tunable

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DO - 10.1109/LED.2005.859651

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JO - IEEE Electron Device Letters

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Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

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