Abstract
The possibility of locally varying the potential energy of the electrons and holes localized in a quantum well by a quantum-dot array deposited in the immediate vicinity of the quantum well is demonstrated. These changes in the potential energy are induced when a strain arises in the quantum-dot region.
Original language | English |
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Pages (from-to) | 88-91 |
Number of pages | 4 |
Journal | Semiconductors |
Volume | 31 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 1997 |
Externally published | Yes |