Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode method

John Hartnett; D. Mouneyrac; Jean-Michel Le Floch; J. Krupka; Michael Tobar; D. Cros

doi:10.1063/1.2969905

Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode method

John Hartnett, D. Mouneyrac, Jean-Michel Le Floch, J. Krupka, Michael Tobar, D. Cros

Graduate Research School

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Abstract

Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by whispering gallery modes.

Original language	English
Pages (from-to)	online - approx 5-20pp
Journal	Applied Physics Letters
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.2969905
Publication status	Published - 2008

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title = "Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode method",

abstract = "Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by whispering gallery modes.",

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AU - Krupka, J.

AU - Tobar, Michael

AU - Cros, D.

PY - 2008

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N2 - Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by whispering gallery modes.

AB - Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by whispering gallery modes.

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DO - 10.1063/1.2969905

M3 - Article

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SP - online - approx 5-20pp

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -

Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode method

Abstract

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