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Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures

  • K.M. Indlekofer
  • , E. Dona
  • , J. Malindretos
  • , M. Bertelli
  • , Martin Kocan
  • , A. Rizzi
  • , H. Lueth

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish
    Pages (from-to)769-772
    JournalPhysica Status Solidi (B) Basic Research
    Volume234
    Issue number3
    DOIs
    Publication statusPublished - 2002

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