Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures

K.M. Indlekofer, E. Dona, J. Malindretos, M. Bertelli, Martin Kocan, A. Rizzi, H. Lueth

    Research output: Contribution to journalArticle

    17 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)769-772
    JournalPhysica Status Solidi (B) Basic Research
    Volume234
    Issue number3
    DOIs
    Publication statusPublished - 2002

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