Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures

K.M. Indlekofer, E. Dona, J. Malindretos, M. Bertelli, Martin Kocan, A. Rizzi, H. Lueth

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	769-772
Journal	Physica Status Solidi (B) Basic Research
Volume	234
Issue number	3
DOIs	https://doi.org/10.1002/1521-3951(200212)234:3<769::AID-PSSB769>3.0.CO;2-H
Publication status	Published - 2002

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title = "Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures",

author = "K.M. Indlekofer and E. Dona and J. Malindretos and M. Bertelli and Martin Kocan and A. Rizzi and H. Lueth",

year = "2002",

doi = "10.1002/1521-3951(200212)234:3<769::AID-PSSB769>3.0.CO;2-H",

language = "English",

volume = "234",

pages = "769--772",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag GmbH & Co. KGaA",

number = "3",

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TY - JOUR

T1 - Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures

AU - Indlekofer, K.M.

AU - Dona, E.

AU - Malindretos, J.

AU - Bertelli, M.

AU - Kocan, Martin

AU - Rizzi, A.

AU - Lueth, H.

PY - 2002

Y1 - 2002

U2 - 10.1002/1521-3951(200212)234:3<769::AID-PSSB769>3.0.CO;2-H

DO - 10.1002/1521-3951(200212)234:3<769::AID-PSSB769>3.0.CO;2-H

M3 - Article

SN - 0370-1972

VL - 234

SP - 769

EP - 772

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 3

ER -