Modelling and characterization of dynamic behavior of coupled memristor circuits

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13 Citations (Scopus)

Abstract

© 2016 IEEE.This paper explores the dynamic behavior of dual flux coupled memristor circuits in order to further ascertain fundamental theory of memristor circuits. Different cases of flux coupling are mathematically modelled where two memristors are connected in both series and parallel, with consideration given to the polarity of each device. The dynamic behavior is characterized based on the constitutive relations, with a variation of memductance represented in terms of flux, charge, voltage and current. The agreement between theoretical and simulation analyses affirm the memristor closure theorem with coupled memristor circuits behaving as a different type of memristor with higher complexity.
Original languageEnglish
Title of host publication2016 IEEE International Symposium on Circuits and Systems
EditorsMohamad Sawan
Place of PublicationUSA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages690-693
Number of pages4
ISBN (Electronic)9781479953400
ISBN (Print)9781479953400
DOIs
Publication statusPublished - 29 Jul 2016
Event2016 IEEE International Symposium on Circuits and Systems: ISCAS 2016 - Montreal, Canada
Duration: 22 May 201625 May 2016

Conference

Conference2016 IEEE International Symposium on Circuits and Systems
Country/TerritoryCanada
CityMontreal
Period22/05/1625/05/16

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