Modelling and characterization of dynamic behavior of coupled memristor circuits

Jason K. Eshraghian; Herbert H.C. Iu; Tyrone Fernando; Dongsheng Yu; Zhen Li

doi:10.1109/ISCAS.2016.7527334

Modelling and characterization of dynamic behavior of coupled memristor circuits

Jason K. Eshraghian, Herbert H.C. Iu, Tyrone Fernando, Dongsheng Yu, Zhen Li

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

13 Citations (Scopus)

Abstract

© 2016 IEEE.This paper explores the dynamic behavior of dual flux coupled memristor circuits in order to further ascertain fundamental theory of memristor circuits. Different cases of flux coupling are mathematically modelled where two memristors are connected in both series and parallel, with consideration given to the polarity of each device. The dynamic behavior is characterized based on the constitutive relations, with a variation of memductance represented in terms of flux, charge, voltage and current. The agreement between theoretical and simulation analyses affirm the memristor closure theorem with coupled memristor circuits behaving as a different type of memristor with higher complexity.

Original language	English
Title of host publication	2016 IEEE International Symposium on Circuits and Systems
Editors	Mohamad Sawan
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	690-693
Number of pages	4
ISBN (Electronic)	9781479953400
ISBN (Print)	9781479953400
DOIs	https://doi.org/10.1109/ISCAS.2016.7527334
Publication status	Published - 29 Jul 2016
Event	2016 IEEE International Symposium on Circuits and Systems: ISCAS 2016 - Montreal, Canada Duration: 22 May 2016 → 25 May 2016

Conference

Conference	2016 IEEE International Symposium on Circuits and Systems
Country/Territory	Canada
City	Montreal
Period	22/05/16 → 25/05/16

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10.1109/ISCAS.2016.7527334

Cite this

@inproceedings{cefa4e86f0b04adf9c3463306b646881,

title = "Modelling and characterization of dynamic behavior of coupled memristor circuits",

abstract = "{\textcopyright} 2016 IEEE.This paper explores the dynamic behavior of dual flux coupled memristor circuits in order to further ascertain fundamental theory of memristor circuits. Different cases of flux coupling are mathematically modelled where two memristors are connected in both series and parallel, with consideration given to the polarity of each device. The dynamic behavior is characterized based on the constitutive relations, with a variation of memductance represented in terms of flux, charge, voltage and current. The agreement between theoretical and simulation analyses affirm the memristor closure theorem with coupled memristor circuits behaving as a different type of memristor with higher complexity.",

author = "Eshraghian, {Jason K.} and Iu, {Herbert H.C.} and Tyrone Fernando and Dongsheng Yu and Zhen Li",

year = "2016",

month = jul,

day = "29",

doi = "10.1109/ISCAS.2016.7527334",

language = "English",

isbn = "9781479953400",

pages = "690--693",

editor = "Sawan, {Mohamad }",

booktitle = "2016 IEEE International Symposium on Circuits and Systems",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2016 IEEE International Symposium on Circuits and Systems : ISCAS 2016 ; Conference date: 22-05-2016 Through 25-05-2016",

}

Eshraghian, JK , Iu, HHC , Fernando, T, Yu, D & Li, Z 2016, Modelling and characterization of dynamic behavior of coupled memristor circuits. in M Sawan (ed.), 2016 IEEE International Symposium on Circuits and Systems., 7527334, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 690-693, 2016 IEEE International Symposium on Circuits and Systems, Montreal, Canada, 22/05/16. https://doi.org/10.1109/ISCAS.2016.7527334

Modelling and characterization of dynamic behavior of coupled memristor circuits. / Eshraghian, Jason K.; Iu, Herbert H.C.; Fernando, Tyrone et al.

2016 IEEE International Symposium on Circuits and Systems. ed. / Mohamad Sawan. USA : IEEE, Institute of Electrical and Electronics Engineers, 2016. p. 690-693 7527334.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Modelling and characterization of dynamic behavior of coupled memristor circuits

AU - Eshraghian, Jason K.

AU - Iu, Herbert H.C.

AU - Fernando, Tyrone

AU - Yu, Dongsheng

AU - Li, Zhen

PY - 2016/7/29

Y1 - 2016/7/29

N2 - © 2016 IEEE.This paper explores the dynamic behavior of dual flux coupled memristor circuits in order to further ascertain fundamental theory of memristor circuits. Different cases of flux coupling are mathematically modelled where two memristors are connected in both series and parallel, with consideration given to the polarity of each device. The dynamic behavior is characterized based on the constitutive relations, with a variation of memductance represented in terms of flux, charge, voltage and current. The agreement between theoretical and simulation analyses affirm the memristor closure theorem with coupled memristor circuits behaving as a different type of memristor with higher complexity.

AB - © 2016 IEEE.This paper explores the dynamic behavior of dual flux coupled memristor circuits in order to further ascertain fundamental theory of memristor circuits. Different cases of flux coupling are mathematically modelled where two memristors are connected in both series and parallel, with consideration given to the polarity of each device. The dynamic behavior is characterized based on the constitutive relations, with a variation of memductance represented in terms of flux, charge, voltage and current. The agreement between theoretical and simulation analyses affirm the memristor closure theorem with coupled memristor circuits behaving as a different type of memristor with higher complexity.

U2 - 10.1109/ISCAS.2016.7527334

DO - 10.1109/ISCAS.2016.7527334

M3 - Conference paper

SN - 9781479953400

SP - 690

EP - 693

BT - 2016 IEEE International Symposium on Circuits and Systems

A2 - Sawan, Mohamad

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - 2016 IEEE International Symposium on Circuits and Systems

Y2 - 22 May 2016 through 25 May 2016

ER -

Modelling and characterization of dynamic behavior of coupled memristor circuits

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