Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes

V. Gopal, E. Plis, J.B. Rodriguez, C.E. Jones, Lorenzo Faraone, S. Krishna

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    Abstract

    This paper reports the results of modeling of electrical characteristics of midinfrared type II InAs/GaSb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with the effective band gap of SLS material has been used in modeling of the experimental data. Temperature dependence of zero-bias resistance area product (R0A) and bias dependent dynamic resistance of the diode have been analyzed in detail to investigate dark current contributing mechanisms that are limiting the electrical performance of the diode. R0A of the diode is found to be limited by thermal diffusion currents at higher temperatures and Ohmic shunt resistance contribution limits it at low temperatures ∼82 K.
    Original languageEnglish
    Pages (from-to)124506-1-124506-6
    JournalJournal of Applied Physics
    Volume104
    Issue number12
    DOIs
    Publication statusPublished - 2008

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