MOCVD-Grown Wider Bandgap Capping Layers in HgCdTe Long Wavelength Infrared Photoconductors

C.A. Musca, J.F. Siliquini, K.A. Fynn, Brett Nener, Lorenzo Faraone, S.J.C. Irvine

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1912-1922
Journal	Semiconductor Science and Technology
Volume	11
Publication status	Published - 1996

Cite this

@article{5e2f2993424e414a92ab4c0277e3a719,

title = "MOCVD-Grown Wider Bandgap Capping Layers in HgCdTe Long Wavelength Infrared Photoconductors",

author = "C.A. Musca and J.F. Siliquini and K.A. Fynn and Brett Nener and Lorenzo Faraone and S.J.C. Irvine",

year = "1996",

language = "English",

volume = "11",

pages = "1912--1922",

journal = "Semiconductor Science and Technology",

publisher = "IOP Publishing",

}

TY - JOUR

T1 - MOCVD-Grown Wider Bandgap Capping Layers in HgCdTe Long Wavelength Infrared Photoconductors

AU - Musca, C.A.

AU - Siliquini, J.F.

AU - Fynn, K.A.

AU - Nener, Brett

AU - Faraone, Lorenzo

AU - Irvine, S.J.C.

PY - 1996

Y1 - 1996

M3 - Article

VL - 11

SP - 1912

EP - 1922

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -