Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

H. Kala; Gilberto A. Umana Membreno; Jarek Antoszewski; Z.H. Ye; W.D. Hu; R.J. Ding; X.S. Chen; L. He; John Dell; Lorenzo Faraone

Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

H. Kala, Gilberto A. Umana Membreno, Jarek Antoszewski, Z.H. Ye, W.D. Hu, R.J. Ding, X.S. Chen, L. He, John Dell, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper

1 Citation (Scopus)

Original language	English
Title of host publication	COMMAD 2012 PROCEEDINGS
Place of Publication	United States
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	203-204
Volume	1
ISBN (Print)	9781467330459
Publication status	Published - 2012
Event	Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe - The University of Melbourne Royal Melbourne Institute of Technology, Melbourne, Australia Duration: 1 Jan 2012 → …

Conference

Conference	Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe
Period	1/01/12 → …

Cite this

@inproceedings{115288593016435b9baa4b0bf24a3adb,

title = "Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe",

author = "H. Kala and {Umana Membreno}, {Gilberto A.} and Jarek Antoszewski and Z.H. Ye and W.D. Hu and R.J. Ding and X.S. Chen and L. He and John Dell and Lorenzo Faraone",

year = "2012",

language = "English",

isbn = "9781467330459",

volume = "1",

pages = "203--204",

booktitle = "COMMAD 2012 PROCEEDINGS",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe ; Conference date: 01-01-2012",

}

Kala, H , Umana Membreno, GA , Antoszewski, J, Ye, ZH, Hu, WD, Ding, RJ, Chen, XS, He, L, Dell, J & Faraone, L 2012, Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe. in COMMAD 2012 PROCEEDINGS. vol. 1, IEEE, Institute of Electrical and Electronics Engineers, United States, pp. 203-204, Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe, 1/01/12.

Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe. / Kala, H.; Umana Membreno, Gilberto A.; Antoszewski, Jarek; Ye, Z.H.; Hu, W.D.; Ding, R.J.; Chen, X.S.; He, L.; Dell, John ; Faraone, Lorenzo.

COMMAD 2012 PROCEEDINGS. Vol. 1 United States : IEEE, Institute of Electrical and Electronics Engineers, 2012. p. 203-204.

Research output: Chapter in Book/Conference paper › Conference paper

TY - GEN

T1 - Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

AU - Kala, H.

AU - Umana Membreno, Gilberto A.

AU - Antoszewski, Jarek

AU - Ye, Z.H.

AU - Hu, W.D.

AU - Ding, R.J.

AU - Chen, X.S.

AU - He, L.

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2012

Y1 - 2012

M3 - Conference paper

SN - 9781467330459

VL - 1

SP - 203

EP - 204

BT - COMMAD 2012 PROCEEDINGS

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - United States

T2 - Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

Y2 - 1 January 2012

ER -