Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

H. Kala; Gilberto A. Umana Membreno; Jarek Antoszewski; Z.H. Ye; W.D. Hu; R.J. Ding; X.S. Chen; L. He; John Dell; Lorenzo Faraone

Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

H. Kala, Gilberto A. Umana Membreno, Jarek Antoszewski, Z.H. Ye, W.D. Hu, R.J. Ding, X.S. Chen, L. He, John Dell, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

1 Citation (Scopus)

Original language	English
Title of host publication	COMMAD 2012 PROCEEDINGS
Place of Publication	United States
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	203-204
Volume	1
ISBN (Print)	9781467330459
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Abbreviated title	COMMAD
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

Cite this

@inproceedings{115288593016435b9baa4b0bf24a3adb,

title = "Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe",

author = "H. Kala and {Umana Membreno}, {Gilberto A.} and Jarek Antoszewski and Z.H. Ye and W.D. Hu and R.J. Ding and X.S. Chen and L. He and John Dell and Lorenzo Faraone",

year = "2012",

language = "English",

isbn = "9781467330459",

volume = "1",

pages = "203--204",

booktitle = "COMMAD 2012 PROCEEDINGS",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, COMMAD ; Conference date: 12-12-2012 Through 14-12-2012",

}

Kala, H , Umana Membreno, GA , Antoszewski, J, Ye, ZH, Hu, WD, Ding, RJ, Chen, XS, He, L, Dell, J & Faraone, L 2012, Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe. in COMMAD 2012 PROCEEDINGS. vol. 1, IEEE, Institute of Electrical and Electronics Engineers, United States, pp. 203-204, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12.

Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe. / Kala, H.; Umana Membreno, Gilberto A.; Antoszewski, Jarek; Ye, Z.H.; Hu, W.D.; Ding, R.J.; Chen, X.S.; He, L.; Dell, John ; Faraone, Lorenzo.

COMMAD 2012 PROCEEDINGS. Vol. 1 United States : IEEE, Institute of Electrical and Electronics Engineers, 2012. p. 203-204.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

AU - Kala, H.

AU - Umana Membreno, Gilberto A.

AU - Antoszewski, Jarek

AU - Ye, Z.H.

AU - Hu, W.D.

AU - Ding, R.J.

AU - Chen, X.S.

AU - He, L.

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2012

Y1 - 2012

M3 - Conference paper

SN - 9781467330459

VL - 1

SP - 203

EP - 204

BT - COMMAD 2012 PROCEEDINGS

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - United States

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -