Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition

Jaroslaw Wrobel, Kinga Gorczyca, Gilberto A. Umana-Membreno, Artur Keblowski, Jacek Boguski, Piotr Martyniuk, Pawel Madejczyk

Research output: Chapter in Book/Conference paperConference paper

2 Citations (Scopus)

Abstract

The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 - 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.

Original languageEnglish
Title of host publication12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
EditorsP Struk, T Pustelny
Place of PublicationPoland
PublisherSPIE
Number of pages7
ISBN (Print)9781510613911
DOIs
Publication statusPublished - 2017
Event12thProceedings of SPIE
- Sensors, Sensing Structures, and Methods (IOS)
- Szczyrk Gliwice, Poland
Duration: 27 Feb 20173 Mar 2017

Publication series

NameProceedings of SPIE
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Volume10455
ISSN (Print)0277-786X

Conference

Conference12thProceedings of SPIE
- Sensors, Sensing Structures, and Methods (IOS)
CountryPoland
CitySzczyrk Gliwice
Period27/02/173/03/17

Cite this

Wrobel, J., Gorczyca, K., Umana-Membreno, G. A., Keblowski, A., Boguski, J., Martyniuk, P., & Madejczyk, P. (2017). Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition. In P. Struk, & T. Pustelny (Eds.), 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (Proceedings of SPIE; Vol. 10455). Poland: SPIE. https://doi.org/10.1117/12.2282836