Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition

Jaroslaw Wrobel; Kinga Gorczyca; Gilberto A. Umana-Membreno; Artur Keblowski; Jacek Boguski; Piotr Martyniuk; Pawel Madejczyk

doi:10.1117/12.2282836

Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition

Jaroslaw Wrobel, Kinga Gorczyca, Gilberto A. Umana-Membreno, Artur Keblowski, Jacek Boguski, Piotr Martyniuk, Pawel Madejczyk

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

2 Citations (Scopus)

Abstract

The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 - 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.

Original language	English
Title of host publication	12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
Editors	Przemyslaw Struk, Tadeusz Pustelny
Place of Publication	Poland
Publisher	SPIE
Number of pages	7
ISBN (Electronic)	9781510613911
ISBN (Print)	9781510613911
DOIs	https://doi.org/10.1117/12.2282836
Publication status	Published - 2017
Event	12thProceedings of SPIE - Sensors, Sensing Structures, and Methods (IOS) - Szczyrk Gliwice, Poland Duration: 27 Feb 2017 → 3 Mar 2017

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10455
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	12thProceedings of SPIE - Sensors, Sensing Structures, and Methods (IOS)
Country/Territory	Poland
City	Szczyrk Gliwice
Period	27/02/17 → 3/03/17

Access to Document

10.1117/12.2282836

Dark current and noise mechanisms in nBn HgCdTe infrared detectors
Antoszewski, J. (Investigator 01), Umana Membreno, G. A. (Investigator 02) & Rogalski, A. (Investigator 03)
ARC Australian Research Council
1/01/15 → 31/12/17
Project: Research
Carrier Mobility Distributions: New Insights into Fundamental Electronic Transport in Advanced Semiconductor Structures
Faraone, L. (Investigator 01) & Fischetti, M. (Investigator 02)
ARC Australian Research Council
1/01/14 → 31/12/16
Project: Research

Cite this

Wrobel, J., Gorczyca, K., Umana-Membreno, G. A., Keblowski, A., Boguski, J., Martyniuk, P., & Madejczyk, P. (2017). Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition. In P. Struk, & T. Pustelny (Eds.), 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods Article 104550T (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10455). SPIE. https://doi.org/10.1117/12.2282836

Wrobel, Jaroslaw ; Gorczyca, Kinga ; Umana-Membreno, Gilberto A. et al. / Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition. 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods. editor / Przemyslaw Struk ; Tadeusz Pustelny. Poland : SPIE, 2017. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{4d2a9052772e45e9bc9a165014d88902,

title = "Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition",

abstract = "The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 - 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.",

keywords = "HgCdTe, MCT, QMSA, mobility, Hall measurements, MOCVD, doping, infrared detectors, MOLECULAR-BEAM EPITAXY, HG1-XCDXTE",

author = "Jaroslaw Wrobel and Kinga Gorczyca and Umana-Membreno, {Gilberto A.} and Artur Keblowski and Jacek Boguski and Piotr Martyniuk and Pawel Madejczyk",

year = "2017",

doi = "10.1117/12.2282836",

language = "English",

isbn = "9781510613911",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Przemyslaw Struk and Tadeusz Pustelny",

booktitle = "12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods",

address = "United States",

note = "12thProceedings of SPIE<br/> - Sensors, Sensing Structures, and Methods (IOS) ; Conference date: 27-02-2017 Through 03-03-2017",

}

Wrobel, J, Gorczyca, K, Umana-Membreno, GA, Keblowski, A, Boguski, J, Martyniuk, P & Madejczyk, P 2017, Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition. in P Struk & T Pustelny (eds), 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods., 104550T, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10455, SPIE, Poland, 12thProceedings of SPIE
- Sensors, Sensing Structures, and Methods (IOS), Szczyrk Gliwice, Poland, 27/02/17. https://doi.org/10.1117/12.2282836

Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition. / Wrobel, Jaroslaw; Gorczyca, Kinga; Umana-Membreno, Gilberto A. et al.
12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods. ed. / Przemyslaw Struk; Tadeusz Pustelny. Poland: SPIE, 2017. 104550T (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10455).

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition

AU - Wrobel, Jaroslaw

AU - Gorczyca, Kinga

AU - Umana-Membreno, Gilberto A.

AU - Keblowski, Artur

AU - Boguski, Jacek

AU - Martyniuk, Piotr

AU - Madejczyk, Pawel

PY - 2017

Y1 - 2017

N2 - The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 - 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.

AB - The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 - 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.

KW - HgCdTe

KW - MCT

KW - QMSA

KW - mobility

KW - Hall measurements

KW - MOCVD

KW - doping

KW - infrared detectors

KW - MOLECULAR-BEAM EPITAXY

KW - HG1-XCDXTE

U2 - 10.1117/12.2282836

DO - 10.1117/12.2282836

M3 - Conference paper

SN - 9781510613911

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods

A2 - Struk, Przemyslaw

A2 - Pustelny, Tadeusz

PB - SPIE

CY - Poland

T2 - 12thProceedings of SPIE<br/> - Sensors, Sensing Structures, and Methods (IOS)

Y2 - 27 February 2017 through 3 March 2017

ER -

Wrobel J, Gorczyca K, Umana-Membreno GA, Keblowski A, Boguski J, Martyniuk P et al. Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition. In Struk P, Pustelny T, editors, 12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods. Poland: SPIE. 2017. 104550T. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2282836

Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition

Abstract

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Projects

Dark current and noise mechanisms in nBn HgCdTe infrared detectors

Carrier Mobility Distributions: New Insights into Fundamental Electronic Transport in Advanced Semiconductor Structures

Cite this