Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE

J. Antoszewski, M.V. Chan, J.F. Siliquini, Lorenzo Faraone, J.R. Meyer

Research output: Chapter in Book/Conference paperConference paper

Original languageEnglish
Title of host publicationAustralian Compound Optoelectronic Materials and Devices (COMAD) Conference
Place of PublicationCanberra
PublisherAustralian Materials Research Society
Pages147 - 150
VolumeAustralian Materials Research
Publication statusPublished - 1994
EventMobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE -
Duration: 1 Jan 1994 → …

Conference

ConferenceMobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE
Period1/01/94 → …

Cite this

Antoszewski, J., Chan, M. V., Siliquini, J. F., Faraone, L., & Meyer, J. R. (1994). Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE. In Australian Compound Optoelectronic Materials and Devices (COMAD) Conference (Vol. Australian Materials Research, pp. 147 - 150). Canberra: Australian Materials Research Society.
Antoszewski, J. ; Chan, M.V. ; Siliquini, J.F. ; Faraone, Lorenzo ; Meyer, J.R. / Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE. Australian Compound Optoelectronic Materials and Devices (COMAD) Conference. Vol. Australian Materials Research Canberra : Australian Materials Research Society, 1994. pp. 147 - 150
@inproceedings{5235907bb4d440048234b6c5ee4d7f9b,
title = "Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE",
author = "J. Antoszewski and M.V. Chan and J.F. Siliquini and Lorenzo Faraone and J.R. Meyer",
year = "1994",
language = "English",
volume = "Australian Materials Research",
pages = "147 -- 150",
booktitle = "Australian Compound Optoelectronic Materials and Devices (COMAD) Conference",
publisher = "Australian Materials Research Society",

}

Antoszewski, J, Chan, MV, Siliquini, JF, Faraone, L & Meyer, JR 1994, Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE. in Australian Compound Optoelectronic Materials and Devices (COMAD) Conference. vol. Australian Materials Research, Australian Materials Research Society, Canberra, pp. 147 - 150, Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE, 1/01/94.

Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE. / Antoszewski, J.; Chan, M.V.; Siliquini, J.F.; Faraone, Lorenzo; Meyer, J.R.

Australian Compound Optoelectronic Materials and Devices (COMAD) Conference. Vol. Australian Materials Research Canberra : Australian Materials Research Society, 1994. p. 147 - 150.

Research output: Chapter in Book/Conference paperConference paper

TY - GEN

T1 - Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE

AU - Antoszewski, J.

AU - Chan, M.V.

AU - Siliquini, J.F.

AU - Faraone, Lorenzo

AU - Meyer, J.R.

PY - 1994

Y1 - 1994

M3 - Conference paper

VL - Australian Materials Research

SP - 147

EP - 150

BT - Australian Compound Optoelectronic Materials and Devices (COMAD) Conference

PB - Australian Materials Research Society

CY - Canberra

ER -

Antoszewski J, Chan MV, Siliquini JF, Faraone L, Meyer JR. Mobility Spectrum Analysis Application to Hall Effect Interpretation in Hg0.8Cd0.2TeVEpilayers Grown by MBE. In Australian Compound Optoelectronic Materials and Devices (COMAD) Conference. Vol. Australian Materials Research. Canberra: Australian Materials Research Society. 1994. p. 147 - 150