Mn incorporation in GaN thin layers grown by molecular-beam epitaxy

Martin Kocan, J. Malindretos, M. Rover, J. Zenneck, T. Niermann, D. Mai, M. Bertelli, M. Seibt, A. Rizzi

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    12 Citations (Web of Science)


    GaMnN layers have been grown by MBE on Si(111) in a wide range of growth conditions. For different substrate temperatures the structural and composition dependence of the grown layers has been studied as a function of the Mn supply. We find that at regular substrate temperature the incorporation of Mn into the layer is low and difficult to control. Only at a reduced substrate temperature of 650 degrees C and under N-rich growth conditions it is possible to grow homogeneous GaMnN layers if the Mn supply is below 15% of the total metal flux. The incorporation efficiency in this range is about 30%, which corresponds to a maximum Mn content in the diluted layers of about 5%. Above a critical Mn supply, GaMn3N precipitates are formed, which often extend out of the surface with a typical pyramidal structure.
    Original languageEnglish
    Pages (from-to)1348-1353
    JournalSemiconductor Science and Technology
    Issue number9
    Publication statusPublished - 2006


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