Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures

John Dell; Charles Musca; Lorenzo Faraone; K. Prince; Richard Sewell

doi:10.1109/COMMAD.2002.1237217

Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures

John Dell, Charles Musca, Lorenzo Faraone, K. Prince, Richard Sewell

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	COMMAD 2002 PROCEEDINGS (02EX 601)
Editors	GAL MICHAEL
Place of Publication	Piscataway, New Jersey, USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	161-164
Volume	1 only
ISBN (Print)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237217
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	11/12/02 → 13/12/02

Access to Document

10.1109/COMMAD.2002.1237217

Cite this

@inproceedings{20fa0ae2cfb047f9a28bd80b55b43d4c,

title = "Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures",

author = "John Dell and Charles Musca and Lorenzo Faraone and K. Prince and Richard Sewell",

year = "2002",

doi = "10.1109/COMMAD.2002.1237217",

language = "English",

isbn = "0780375718",

volume = "1 only",

pages = "161--164",

editor = "GAL MICHAEL",

booktitle = "COMMAD 2002 PROCEEDINGS (02EX 601)",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",

}

Dell, J, Musca, C, Faraone, L, Prince, K & Sewell, R 2002, Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures. in GAL MICHAEL (ed.), COMMAD 2002 PROCEEDINGS (02EX 601). vol. 1 only, IEEE, Institute of Electrical and Electronics Engineers, Piscataway, New Jersey, USA, pp. 161-164, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 11/12/02. https://doi.org/10.1109/COMMAD.2002.1237217

Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures. / Dell, John; Musca, Charles; Faraone, Lorenzo et al.
COMMAD 2002 PROCEEDINGS (02EX 601). ed. / GAL MICHAEL. Vol. 1 only Piscataway, New Jersey, USA: IEEE, Institute of Electrical and Electronics Engineers, 2002. p. 161-164.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Minority carrier behaviour in abrupt MBE grown HgCdTe heterostructures

AU - Dell, John

AU - Musca, Charles

AU - Faraone, Lorenzo

AU - Prince, K.

AU - Sewell, Richard

PY - 2002

Y1 - 2002

U2 - 10.1109/COMMAD.2002.1237217

DO - 10.1109/COMMAD.2002.1237217

M3 - Conference paper

SN - 0780375718

VL - 1 only

SP - 161

EP - 164

BT - COMMAD 2002 PROCEEDINGS (02EX 601)

A2 - MICHAEL, GAL

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - Piscataway, New Jersey, USA

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002

Y2 - 11 December 2002 through 13 December 2002

ER -