Mid-infrared InAsSb quantum dots with high emission efficiency

Wen Lei, H.H. Tan, C. Jagadish

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Publication status	Published - 2010
Externally published	Yes
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

Cite this

@inproceedings{cb1043f47f254e279e13cf7923f9bec7,

title = "Mid-infrared InAsSb quantum dots with high emission efficiency",

author = "Wen Lei and H.H. Tan and C. Jagadish",

year = "2010",

language = "English",

booktitle = "Proceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 12-12-2010 Through 15-12-2010",

}

TY - GEN

T1 - Mid-infrared InAsSb quantum dots with high emission efficiency

AU - Lei, Wen

AU - Tan, H.H.

AU - Jagadish, C.

PY - 2010

Y1 - 2010

M3 - Conference paper

BT - Proceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 12 December 2010 through 15 December 2010

ER -