Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperatures

John Hartnett, D. Mouneyrac, J. Krupka, Jean-Michel Le Floch, Michael Tobar, D. Cros

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@article{19ef85c777384c13ae093764521a2f88,

title = "Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperatures",

author = "John Hartnett and D. Mouneyrac and J. Krupka and {Le Floch}, Jean-Michel and Michael Tobar and D. Cros",

year = "2011",

doi = "10.1063/1.3561431",

language = "English",

volume = "109",

pages = "4pp",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperatures

AU - Hartnett, John

AU - Mouneyrac, D.

AU - Krupka, J.

AU - Le Floch, Jean-Michel

AU - Tobar, Michael

AU - Cros, D.

PY - 2011

Y1 - 2011

U2 - 10.1063/1.3561431

DO - 10.1063/1.3561431

M3 - Article

VL - 109

SP - 4pp

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -