Microstructural origins of localization in InGaN quantum wells

R.A. Oliver, S.E. Bennett, T. Zhu, D.J. Beesley, M.J. Kappers, David Saxey, A. Cerezo, C.J. Humphreys

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Original language	English
Pages (from-to)	Article number 354003, 8pp
Journal	Journal of Physics D-Applied Physics
Volume	43
DOIs	https://doi.org/10.1088/0022-3727/43/35/354003
Publication status	Published - 2010

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title = "Microstructural origins of localization in InGaN quantum wells",

author = "R.A. Oliver and S.E. Bennett and T. Zhu and D.J. Beesley and M.J. Kappers and David Saxey and A. Cerezo and C.J. Humphreys",

year = "2010",

doi = "10.1088/0022-3727/43/35/354003",

language = "English",

volume = "43",

pages = "Article number 354003, 8pp",

journal = "Journal of Physics D-Applied Physics",

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TY - JOUR

T1 - Microstructural origins of localization in InGaN quantum wells

AU - Oliver, R.A.

AU - Bennett, S.E.

AU - Zhu, T.

AU - Beesley, D.J.

AU - Kappers, M.J.

AU - Saxey, David

AU - Cerezo, A.

AU - Humphreys, C.J.

PY - 2010

Y1 - 2010

U2 - 10.1088/0022-3727/43/35/354003

DO - 10.1088/0022-3727/43/35/354003

M3 - Article

SN - 0022-3727

VL - 43

SP - Article number 354003, 8pp

JO - Journal of Physics D-Applied Physics

JF - Journal of Physics D-Applied Physics

ER -