Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type regions created during RIE processing. For the RIE processing conditions used (400 mT, CH4/H-2, 90 W), p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 degrees C for 17 h, LBIC measurements clearly indicated that no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a uniform p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (N-A-N-D = 2 x 10(16) cm(-3), mu = 350 cm(2) V-1 s(-1)). (C) 1998 American Institute of Physics.