Abstract
The diffusion of Al in 6H-SiC during high-temperature ion implantation was studied using secondary ion mass spectrometry. A 6H-SiC wafer was implanted with 50 keV Al ions to a dose of 1.4E16 cm-2 in the high temperature range 1300°-1800 °C and at room temperature. There are two diffusion regions that can be identified in the Al profiles. At high Al concentrations the gettering related peak and profile broadening are observed. At low Al concentrations, the profiles have a sharp kink and deep penetrating diffusion tails. In the first region, the diffusion coefficient is temperature independent, while in the second it exponentially increases as a function of temperature. The Al redistribution can be explained with the substitutional-interstitial diffusion mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 141-146 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 504 |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: 1 Dec 1997 → 2 Dec 1997 |