MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 mu m

Wenwu Pan, Lijuan Wang, Yanchao Zhang, Wen Lei, Shumin Wang

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Abstract

GaAs1-xBix/AlGaAs quantum wells (QWs) with varying As/Ga beam equivalent pressure (BEP) ratios were grown by solid source molecular beam epitaxy at a relatively high temperature of 350-400 degrees C intended for light emitting applications with wavelengths beyond 1.2 mu m. Both the Bi content and the photoluminescence (PL) intensity were found to be highly dependent on As-2 flux, especially for the case of growing GaAsBi at a relatively high temperature. A graded index separate confinement GaAsBi/AlGaAs single QW with 5.8% Bi exhibited a strong PL emission at 1.22 mu m. The growth strategy to incorporate considerable Bi into GaAs at a relatively high temperature through meticulous control of the As/Ga BEP ratio and compensation of Bi flux is demonstrated to be effective in guaranteeing a high Bi content as well as an optimal optical performance of GaAsBi QWs. Published under license by AIP Publishing.

Original languageEnglish
Article number152102
Number of pages4
JournalApplied Physics Letters
Volume114
Issue number15
DOIs
Publication statusPublished - 15 Apr 2019

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