MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 mu m

Wenwu Pan, Lijuan Wang, Yanchao Zhang, Wen Lei, Shumin Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

GaAs1-xBix/AlGaAs quantum wells (QWs) with varying As/Ga beam equivalent pressure (BEP) ratios were grown by solid source molecular beam epitaxy at a relatively high temperature of 350-400 degrees C intended for light emitting applications with wavelengths beyond 1.2 mu m. Both the Bi content and the photoluminescence (PL) intensity were found to be highly dependent on As-2 flux, especially for the case of growing GaAsBi at a relatively high temperature. A graded index separate confinement GaAsBi/AlGaAs single QW with 5.8% Bi exhibited a strong PL emission at 1.22 mu m. The growth strategy to incorporate considerable Bi into GaAs at a relatively high temperature through meticulous control of the As/Ga BEP ratio and compensation of Bi flux is demonstrated to be effective in guaranteeing a high Bi content as well as an optimal optical performance of GaAsBi QWs. Published under license by AIP Publishing.

Original languageEnglish
Article number152102
Number of pages4
JournalApplied Physics Letters
Volume114
Issue number15
DOIs
Publication statusPublished - 15 Apr 2019

Cite this

Pan, Wenwu ; Wang, Lijuan ; Zhang, Yanchao ; Lei, Wen ; Wang, Shumin. / MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 mu m. In: Applied Physics Letters. 2019 ; Vol. 114, No. 15.
@article{e85fc1f6b3f14abab0941c6f08552692,
title = "MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 mu m",
abstract = "GaAs1-xBix/AlGaAs quantum wells (QWs) with varying As/Ga beam equivalent pressure (BEP) ratios were grown by solid source molecular beam epitaxy at a relatively high temperature of 350-400 degrees C intended for light emitting applications with wavelengths beyond 1.2 mu m. Both the Bi content and the photoluminescence (PL) intensity were found to be highly dependent on As-2 flux, especially for the case of growing GaAsBi at a relatively high temperature. A graded index separate confinement GaAsBi/AlGaAs single QW with 5.8{\%} Bi exhibited a strong PL emission at 1.22 mu m. The growth strategy to incorporate considerable Bi into GaAs at a relatively high temperature through meticulous control of the As/Ga BEP ratio and compensation of Bi flux is demonstrated to be effective in guaranteeing a high Bi content as well as an optimal optical performance of GaAsBi QWs. Published under license by AIP Publishing.",
keywords = "BAND-GAP, TEMPERATURE-DEPENDENCE, GAAS1-XBIX",
author = "Wenwu Pan and Lijuan Wang and Yanchao Zhang and Wen Lei and Shumin Wang",
year = "2019",
month = "4",
day = "15",
doi = "10.1063/1.5086540",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "ACOUSTICAL SOC AMER AMER INST PHYSICS",
number = "15",

}

MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 mu m. / Pan, Wenwu; Wang, Lijuan; Zhang, Yanchao; Lei, Wen; Wang, Shumin.

In: Applied Physics Letters, Vol. 114, No. 15, 152102, 15.04.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 mu m

AU - Pan, Wenwu

AU - Wang, Lijuan

AU - Zhang, Yanchao

AU - Lei, Wen

AU - Wang, Shumin

PY - 2019/4/15

Y1 - 2019/4/15

N2 - GaAs1-xBix/AlGaAs quantum wells (QWs) with varying As/Ga beam equivalent pressure (BEP) ratios were grown by solid source molecular beam epitaxy at a relatively high temperature of 350-400 degrees C intended for light emitting applications with wavelengths beyond 1.2 mu m. Both the Bi content and the photoluminescence (PL) intensity were found to be highly dependent on As-2 flux, especially for the case of growing GaAsBi at a relatively high temperature. A graded index separate confinement GaAsBi/AlGaAs single QW with 5.8% Bi exhibited a strong PL emission at 1.22 mu m. The growth strategy to incorporate considerable Bi into GaAs at a relatively high temperature through meticulous control of the As/Ga BEP ratio and compensation of Bi flux is demonstrated to be effective in guaranteeing a high Bi content as well as an optimal optical performance of GaAsBi QWs. Published under license by AIP Publishing.

AB - GaAs1-xBix/AlGaAs quantum wells (QWs) with varying As/Ga beam equivalent pressure (BEP) ratios were grown by solid source molecular beam epitaxy at a relatively high temperature of 350-400 degrees C intended for light emitting applications with wavelengths beyond 1.2 mu m. Both the Bi content and the photoluminescence (PL) intensity were found to be highly dependent on As-2 flux, especially for the case of growing GaAsBi at a relatively high temperature. A graded index separate confinement GaAsBi/AlGaAs single QW with 5.8% Bi exhibited a strong PL emission at 1.22 mu m. The growth strategy to incorporate considerable Bi into GaAs at a relatively high temperature through meticulous control of the As/Ga BEP ratio and compensation of Bi flux is demonstrated to be effective in guaranteeing a high Bi content as well as an optimal optical performance of GaAsBi QWs. Published under license by AIP Publishing.

KW - BAND-GAP

KW - TEMPERATURE-DEPENDENCE

KW - GAAS1-XBIX

U2 - 10.1063/1.5086540

DO - 10.1063/1.5086540

M3 - Article

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 152102

ER -