MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates

Wen Lei, Renjie Gu, Jarek Antoszewski, John Dell, G. Neusser, M. Sieger, B. Mizaikoff, Lorenzo Faraone

    Research output: Contribution to journalArticle

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    Abstract

    © 2015, The Minerals, Metals & Materials Society. GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on GaAs. The MBE-grown mid-wave infrared (MWIR) HgCdTe layers on GaSb substrates present material quality comparable to those grown on GaAs substrates, which is one of the state-of-the-art alternative substrates currently used to grow HgCdTe for the fabrication of MWIR detectors and focal plane arrays. Typically, HgCdTe materials grown on GaSb are found to have a rocking curve (double crystal x-ray diffraction) full width at half maximum of ~122 arcsec and an etch pit density of ~mid-106 cm–2. Electron backscatter diffraction mapping shows that the lattice misorientation/misfit dislocations near the HgCdTe/CdTe interface are negligible for GaSb substrates in comparison to GaAs substrates, and that the material quality of the HgCdTe layer on GaSb is determined primarily by the material quality of the CdTe buffer layer. These preliminary results are very encouraging considering that this is a relatively recent research effort, and higher quality MBE-grown HgCdTe materials are expected on GaSb substrates with further optimization of HgCdTe growth conditions as well as further improvements in the growth conditions for CdTe buffer layers.
    Original languageEnglish
    Pages (from-to)3180-3187
    JournalJournal of Electronic Materials
    Volume44
    Issue number9
    DOIs
    Publication statusPublished - Sep 2015

    Fingerprint

    Molecular beam epitaxy
    molecular beam epitaxy
    Infrared radiation
    Substrates
    Buffer layers
    buffers
    Dislocations (crystals)
    Focal plane arrays
    Infrared detectors
    infrared detectors
    focal plane devices
    Full width at half maximum
    Electron diffraction
    Crystal lattices
    misalignment
    Minerals
    x ray diffraction
    Diffraction
    Metals
    minerals

    Cite this

    @article{1bf54bf45ade430a93e8643c70aaa47c,
    title = "MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates",
    abstract = "{\circledC} 2015, The Minerals, Metals & Materials Society. GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on GaAs. The MBE-grown mid-wave infrared (MWIR) HgCdTe layers on GaSb substrates present material quality comparable to those grown on GaAs substrates, which is one of the state-of-the-art alternative substrates currently used to grow HgCdTe for the fabrication of MWIR detectors and focal plane arrays. Typically, HgCdTe materials grown on GaSb are found to have a rocking curve (double crystal x-ray diffraction) full width at half maximum of ~122 arcsec and an etch pit density of ~mid-106 cm–2. Electron backscatter diffraction mapping shows that the lattice misorientation/misfit dislocations near the HgCdTe/CdTe interface are negligible for GaSb substrates in comparison to GaAs substrates, and that the material quality of the HgCdTe layer on GaSb is determined primarily by the material quality of the CdTe buffer layer. These preliminary results are very encouraging considering that this is a relatively recent research effort, and higher quality MBE-grown HgCdTe materials are expected on GaSb substrates with further optimization of HgCdTe growth conditions as well as further improvements in the growth conditions for CdTe buffer layers.",
    author = "Wen Lei and Renjie Gu and Jarek Antoszewski and John Dell and G. Neusser and M. Sieger and B. Mizaikoff and Lorenzo Faraone",
    year = "2015",
    month = "9",
    doi = "10.1007/s11664-015-3876-4",
    language = "English",
    volume = "44",
    pages = "3180--3187",
    journal = "Journal of Electronic Materials",
    issn = "0361-5235",
    publisher = "Springer",
    number = "9",

    }

    MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates. / Lei, Wen; Gu, Renjie; Antoszewski, Jarek; Dell, John; Neusser, G.; Sieger, M.; Mizaikoff, B.; Faraone, Lorenzo.

    In: Journal of Electronic Materials, Vol. 44, No. 9, 09.2015, p. 3180-3187.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates

    AU - Lei, Wen

    AU - Gu, Renjie

    AU - Antoszewski, Jarek

    AU - Dell, John

    AU - Neusser, G.

    AU - Sieger, M.

    AU - Mizaikoff, B.

    AU - Faraone, Lorenzo

    PY - 2015/9

    Y1 - 2015/9

    N2 - © 2015, The Minerals, Metals & Materials Society. GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on GaAs. The MBE-grown mid-wave infrared (MWIR) HgCdTe layers on GaSb substrates present material quality comparable to those grown on GaAs substrates, which is one of the state-of-the-art alternative substrates currently used to grow HgCdTe for the fabrication of MWIR detectors and focal plane arrays. Typically, HgCdTe materials grown on GaSb are found to have a rocking curve (double crystal x-ray diffraction) full width at half maximum of ~122 arcsec and an etch pit density of ~mid-106 cm–2. Electron backscatter diffraction mapping shows that the lattice misorientation/misfit dislocations near the HgCdTe/CdTe interface are negligible for GaSb substrates in comparison to GaAs substrates, and that the material quality of the HgCdTe layer on GaSb is determined primarily by the material quality of the CdTe buffer layer. These preliminary results are very encouraging considering that this is a relatively recent research effort, and higher quality MBE-grown HgCdTe materials are expected on GaSb substrates with further optimization of HgCdTe growth conditions as well as further improvements in the growth conditions for CdTe buffer layers.

    AB - © 2015, The Minerals, Metals & Materials Society. GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on GaAs. The MBE-grown mid-wave infrared (MWIR) HgCdTe layers on GaSb substrates present material quality comparable to those grown on GaAs substrates, which is one of the state-of-the-art alternative substrates currently used to grow HgCdTe for the fabrication of MWIR detectors and focal plane arrays. Typically, HgCdTe materials grown on GaSb are found to have a rocking curve (double crystal x-ray diffraction) full width at half maximum of ~122 arcsec and an etch pit density of ~mid-106 cm–2. Electron backscatter diffraction mapping shows that the lattice misorientation/misfit dislocations near the HgCdTe/CdTe interface are negligible for GaSb substrates in comparison to GaAs substrates, and that the material quality of the HgCdTe layer on GaSb is determined primarily by the material quality of the CdTe buffer layer. These preliminary results are very encouraging considering that this is a relatively recent research effort, and higher quality MBE-grown HgCdTe materials are expected on GaSb substrates with further optimization of HgCdTe growth conditions as well as further improvements in the growth conditions for CdTe buffer layers.

    U2 - 10.1007/s11664-015-3876-4

    DO - 10.1007/s11664-015-3876-4

    M3 - Article

    VL - 44

    SP - 3180

    EP - 3187

    JO - Journal of Electronic Materials

    JF - Journal of Electronic Materials

    SN - 0361-5235

    IS - 9

    ER -