MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors

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    Abstract

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the cost to fabricate HgCdTe based advanced infrared devices is relatively high. One approach to address this problem is to use cost effective alternative substrate, mainly Si and GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In this paper, recent progress in molecular beam epitaxial (MBE) growth of HgCdTe infrared material at UWA is reported. HgCdTe has been grown on GaSb substrates by MBE, and has shown a lower Etch Pit Density (EPD) and higher minority carrier lifetime in comparison to other alternative substrates. This result makes GaSb an interesting and promising alternative substrate material for HgCdTe epitaxy.

    Original languageEnglish
    Pages (from-to)216-219
    Number of pages4
    JournalJournal of Crystal Growth
    Volume468
    DOIs
    Publication statusPublished - 15 Jun 2017

    Fingerprint

    Molecular beams
    Infrared detectors
    infrared detectors
    Epitaxial growth
    molecular beams
    Substrates
    Infrared devices
    costs
    Carrier lifetime
    carrier lifetime
    minority carriers
    epitaxy
    Costs
    Infrared radiation
    detectors

    Cite this

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    title = "MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors",
    abstract = "HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the cost to fabricate HgCdTe based advanced infrared devices is relatively high. One approach to address this problem is to use cost effective alternative substrate, mainly Si and GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In this paper, recent progress in molecular beam epitaxial (MBE) growth of HgCdTe infrared material at UWA is reported. HgCdTe has been grown on GaSb substrates by MBE, and has shown a lower Etch Pit Density (EPD) and higher minority carrier lifetime in comparison to other alternative substrates. This result makes GaSb an interesting and promising alternative substrate material for HgCdTe epitaxy.",
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    author = "R. Gu and J. Antoszewski and W. Lei and I. Madni and G. Umana-Membrenao and L. Faraone",
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    T1 - MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors

    AU - Gu, R.

    AU - Antoszewski, J.

    AU - Lei, W.

    AU - Madni, I.

    AU - Umana-Membrenao, G.

    AU - Faraone, L.

    PY - 2017/6/15

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    AB - HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the cost to fabricate HgCdTe based advanced infrared devices is relatively high. One approach to address this problem is to use cost effective alternative substrate, mainly Si and GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In this paper, recent progress in molecular beam epitaxial (MBE) growth of HgCdTe infrared material at UWA is reported. HgCdTe has been grown on GaSb substrates by MBE, and has shown a lower Etch Pit Density (EPD) and higher minority carrier lifetime in comparison to other alternative substrates. This result makes GaSb an interesting and promising alternative substrate material for HgCdTe epitaxy.

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    KW - Alternative substrate

    KW - EPD

    KW - GaSb

    KW - HgCdTe

    KW - Lifetime

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    JO - Journal of Crystal Growth

    JF - Journal of Crystal Growth

    SN - 0022-0248

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