The packing density associated with crossbar arrays offers important architectural solutions to numerous forms of computational engines. Mitigation of sneak paths in the crossbar array, however, requires additional layers in fabrication technology to impede current flow in order to avoid undesired changes to the state when reading and writing to and from the array. This results in an unavoidable increase in the vertical stacking dimension of the array. With the recent emergence of bistable memristors under both DC and AC, by adopting their asymptotic dynamics, we realize a significant improvement in memory construct and spatial constraints of memristor crossbar arrays. In this brief, we formalize a method of configuring a whole array architecture to any permutation of states without sacrificing array density by using a rigorous theoretical analysis, and confirmed via simulation.
|Journal||IEEE Transactions on Circuits and Systems II: Express Briefs|
|Publication status||Published - Dec 2017|