Materials and Processes for MEMS-Based Infrared Microspectrometer Integrated on HgCdTe Detectors

Jarek Antoszewski; K.J. Winchester; Thuyen Nguyen; Adrian Keating; Dilusha Silva; Charles Musca; John Dell; Lorenzo Faraone

doi:10.1109/JSTQE.2008.919741

Materials and Processes for MEMS-Based Infrared Microspectrometer Integrated on HgCdTe Detectors

Jarek Antoszewski, K.J. Winchester, Thuyen Nguyen, Adrian Keating, Dilusha Silva, Charles Musca, John Dell, Lorenzo Faraone

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Abstract

The materials and processes for fabrication of monolithicallyintegrated microelectromechanical systems-based microspectrometersoperating in the short-wavelength IR range ispresented. Using low-temperature surface micromachining techniques,compatible with a range of IR sensor technologies, siliconnitride-based tunable Fabry–Perot filter structures with distributedBragg mirrorsmade ofGe/SiO/Ge layers have been monolithicallyintegrated with HgCdTe photoconductors. The stresswithin and between themany layers of the structure has been eliminatedor compensated by stress tuning of the deposition conditions.The demonstrated microspectrometers have a tuning range of 1.8–2.2 μm with relative peak transmission of 70% and full-width athalf-maximum of 80 ± 10 nm.

Original language	English
Pages (from-to)	1031-1041
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	14
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2008.919741 https://doi.org/10.1109/jstqe.2008.919741
Publication status	Published - 2008

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Antoszewski, J., Winchester, K. J., Nguyen, T., Keating, A., Silva, D., Musca, C., Dell, J., & Faraone, L. (2008). Materials and Processes for MEMS-Based Infrared Microspectrometer Integrated on HgCdTe Detectors. IEEE Journal of Selected Topics in Quantum Electronics, 14(4), 1031-1041. https://doi.org/10.1109/JSTQE.2008.919741, https://doi.org/10.1109/jstqe.2008.919741

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abstract = "The materials and processes for fabrication of monolithicallyintegrated microelectromechanical systems-based microspectrometersoperating in the short-wavelength IR range ispresented. Using low-temperature surface micromachining techniques,compatible with a range of IR sensor technologies, siliconnitride-based tunable Fabry–Perot filter structures with distributedBragg mirrorsmade ofGe/SiO/Ge layers have been monolithicallyintegrated with HgCdTe photoconductors. The stresswithin and between themany layers of the structure has been eliminatedor compensated by stress tuning of the deposition conditions.The demonstrated microspectrometers have a tuning range of 1.8–2.2 μm with relative peak transmission of 70% and full-width athalf-maximum of 80 ± 10 nm.",

author = "Jarek Antoszewski and K.J. Winchester and Thuyen Nguyen and Adrian Keating and Dilusha Silva and Charles Musca and John Dell and Lorenzo Faraone",

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Antoszewski, J, Winchester, KJ, Nguyen, T, Keating, A , Silva, D, Musca, C, Dell, J & Faraone, L 2008, 'Materials and Processes for MEMS-Based Infrared Microspectrometer Integrated on HgCdTe Detectors', IEEE Journal of Selected Topics in Quantum Electronics, vol. 14, no. 4, pp. 1031-1041. https://doi.org/10.1109/JSTQE.2008.919741, https://doi.org/10.1109/jstqe.2008.919741

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T1 - Materials and Processes for MEMS-Based Infrared Microspectrometer Integrated on HgCdTe Detectors

AU - Antoszewski, Jarek

AU - Winchester, K.J.

AU - Nguyen, Thuyen

AU - Keating, Adrian

AU - Silva, Dilusha

AU - Musca, Charles

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2008

Y1 - 2008

N2 - The materials and processes for fabrication of monolithicallyintegrated microelectromechanical systems-based microspectrometersoperating in the short-wavelength IR range ispresented. Using low-temperature surface micromachining techniques,compatible with a range of IR sensor technologies, siliconnitride-based tunable Fabry–Perot filter structures with distributedBragg mirrorsmade ofGe/SiO/Ge layers have been monolithicallyintegrated with HgCdTe photoconductors. The stresswithin and between themany layers of the structure has been eliminatedor compensated by stress tuning of the deposition conditions.The demonstrated microspectrometers have a tuning range of 1.8–2.2 μm with relative peak transmission of 70% and full-width athalf-maximum of 80 ± 10 nm.

AB - The materials and processes for fabrication of monolithicallyintegrated microelectromechanical systems-based microspectrometersoperating in the short-wavelength IR range ispresented. Using low-temperature surface micromachining techniques,compatible with a range of IR sensor technologies, siliconnitride-based tunable Fabry–Perot filter structures with distributedBragg mirrorsmade ofGe/SiO/Ge layers have been monolithicallyintegrated with HgCdTe photoconductors. The stresswithin and between themany layers of the structure has been eliminatedor compensated by stress tuning of the deposition conditions.The demonstrated microspectrometers have a tuning range of 1.8–2.2 μm with relative peak transmission of 70% and full-width athalf-maximum of 80 ± 10 nm.

U2 - 10.1109/JSTQE.2008.919741

DO - 10.1109/JSTQE.2008.919741

M3 - Article

SN - 1077-260X

VL - 14

SP - 1031

EP - 1041

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 4

ER -

Materials and Processes for MEMS-Based Infrared Microspectrometer Integrated on HgCdTe Detectors

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