@inproceedings{cc8e628a86484082b7454303cdddb1cd,
title = "Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n- and p-type matrices",
abstract = "Accumulation of electrons and holes has been revealed by capacitance-voltage technique in As-cluster containing GaAs layers sandwiched between n-type or p-type GaAs buffers. As a result of the majority carrier accumulation, a large depletion region forms in adjacent buffers. Simulation of the capacitance-voltage characteristics based on numerical solution of the Poisson equation showed the concentration of accumulated charge to be as high as 1×1012 cm-2 which is comparable with the concentration of As clusters determined from transmission electron microscopy study.",
keywords = "Capacitance-voltage characteristics, Charge carrier processes, Dielectric constant, Electric resistance, Gallium arsenide, Nanoscale devices, Physics, Schottky barriers, Temperature, Transmission electron microscopy",
author = "Brunkov, {P. N.} and Chaldyshev, {V. V.} and Chernigovskii, {A. V.} and Suvorova, {A. A.} and Bert, {N. A.} and Konnikov, {S. G.} and Preobrazhenskii, {V. V.} and Putyato, {M. A.} and Semyagin, {B. R.}",
year = "2000",
doi = "10.1109/SIM.2000.939211",
language = "English",
series = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",
publisher = "IEEE, Institute of Electrical and Electronics Engineers",
pages = "125--128",
editor = "Welham, {N. J.} and C. Jagadish",
booktitle = "2000 International Semiconducting and Insulating Materials Conference, SIMC 2000",
address = "United States",
note = "11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",
}