Magnetoresistance characteristics of gamma-irradiated Al0.35Ga0.65N / GaN HFETs

Gilberto A. Umana-Membreno; John Dell; Giacinta Parish; Brett Nener; Lorenzo Faraone; R. Ventury; U.K. Mishra

Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs

Gilberto A. Umana-Membreno, John Dell, Giacinta Parish, Brett Nener, Lorenzo Faraone, R. Ventury, U.K. Mishra

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceeding of SPIE: Microelectronics: Design, Technology, and Packaging
Editors	Derek Abbott, Kamran Eshraghian, Charles A. Musca, Dimitris Pavlidis, Neil Weste
Place of Publication	Bellingham, Washington, USA
Publisher	SPIE
Pages	152-162
Volume	5274
Edition	Perth, Western Australia
ISBN (Print)	0819451673
Publication status	Published - 2004
Event	Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs - Perth, Western Australia Duration: 1 Jan 2004 → …

Conference

Conference	Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs
Period	1/01/04 → …

Cite this

Umana-Membreno, G. A., Dell, J., Parish, G., Nener, B., Faraone, L., Ventury, R., & Mishra, U. K. (2004). Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs. In D. Abbott, K. Eshraghian, C. A. Musca, D. Pavlidis, & N. Weste (Eds.), Proceeding of SPIE: Microelectronics: Design, Technology, and Packaging (Perth, Western Australia ed., Vol. 5274, pp. 152-162). SPIE.

Umana-Membreno, Gilberto A. ; Dell, John ; Parish, Giacinta et al. / Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs. Proceeding of SPIE: Microelectronics: Design, Technology, and Packaging. editor / Derek Abbott ; Kamran Eshraghian ; Charles A. Musca ; Dimitris Pavlidis ; Neil Weste. Vol. 5274 Perth, Western Australia. ed. Bellingham, Washington, USA : SPIE, 2004. pp. 152-162

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title = "Magnetoresistance characteristics of gamma-irradiated Al0.35Ga0.65N / GaN HFETs",

author = "Umana-Membreno, {Gilberto A.} and John Dell and Giacinta Parish and Brett Nener and Lorenzo Faraone and R. Ventury and U.K. Mishra",

year = "2004",

language = "English",

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volume = "5274",

pages = "152--162",

editor = "Derek Abbott and Kamran Eshraghian and Musca, {Charles A.} and Dimitris Pavlidis and Neil Weste",

booktitle = "Proceeding of SPIE: Microelectronics: Design, Technology, and Packaging",

publisher = "SPIE",

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edition = "Perth, Western Australia",

note = "Magnetoresistance characteristics of gamma-irradiated Al0.35Ga0.65N / GaN HFETs ; Conference date: 01-01-2004",

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Umana-Membreno, GA , Dell, J , Parish, G , Nener, B , Faraone, L, Ventury, R & Mishra, UK 2004, Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs. in D Abbott, K Eshraghian, CA Musca, D Pavlidis & N Weste (eds), Proceeding of SPIE: Microelectronics: Design, Technology, and Packaging. Perth, Western Australia edn, vol. 5274, SPIE, Bellingham, Washington, USA, pp. 152-162, Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs, 1/01/04.

Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs. / Umana-Membreno, Gilberto A.; Dell, John ; Parish, Giacinta et al.
Proceeding of SPIE: Microelectronics: Design, Technology, and Packaging. ed. / Derek Abbott; Kamran Eshraghian; Charles A. Musca; Dimitris Pavlidis; Neil Weste. Vol. 5274 Perth, Western Australia. ed. Bellingham, Washington, USA: SPIE, 2004. p. 152-162.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Magnetoresistance characteristics of gamma-irradiated Al0.35Ga0.65N / GaN HFETs

AU - Umana-Membreno, Gilberto A.

AU - Dell, John

AU - Parish, Giacinta

AU - Nener, Brett

AU - Faraone, Lorenzo

AU - Ventury, R.

AU - Mishra, U.K.

PY - 2004

Y1 - 2004

M3 - Conference paper

SN - 0819451673

VL - 5274

SP - 152

EP - 162

BT - Proceeding of SPIE: Microelectronics: Design, Technology, and Packaging

A2 - Abbott, Derek

A2 - Eshraghian, Kamran

A2 - Musca, Charles A.

A2 - Pavlidis, Dimitris

A2 - Weste, Neil

PB - SPIE

CY - Bellingham, Washington, USA

T2 - Magnetoresistance characteristics of gamma-irradiated Al0.35Ga0.65N / GaN HFETs

Y2 - 1 January 2004

ER -

Umana-Membreno GA , Dell J , Parish G , Nener B , Faraone L, Ventury R et al. Magnetoresistance characteristics of gamma-irradiated Al_0.35Ga_0.65N / GaN HFETs. In Abbott D, Eshraghian K, Musca CA, Pavlidis D, Weste N, editors, Proceeding of SPIE: Microelectronics: Design, Technology, and Packaging. Perth, Western Australia ed. Vol. 5274. Bellingham, Washington, USA: SPIE. 2004. p. 152-162