LT GaAs delta-doped with In: enhanced As excess, In-Ga intermixing, As cluster array ordering

N. A. Bert, V. V. Chaldyshev, A. A. Suvorova, N. N. Faleev, A. E. Kunitsyn, Yu G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner

Research output: Contribution to conferenceConference presentation/ephemerapeer-review

Abstract

The effects of indium incorporation in GaAs grown by MBE at low substrate temperature (LT GaAs) have been studied. The 0.04% indium doping is shown to provide an increase in the As excess along with improved crystal quality. The In-Ga intermixing is found to enhance by almost two orders of magnitude due to a high point defect concentration in LT GaAs. The effective activation energy of the intermixing is determined from TEM measurements to be 1.1 eV. The As precipitation kinetics is found to be quicker in In-free regions than within the In-containing layers. Using these observations, we successfully formed a 30 nm period perfect superlattice consisting of thin (double cluster diameter) As cluster sheets separated by cluster-free LT GaAs spacers.

Original languageEnglish
Pages93-96
Number of pages4
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA, United States
Duration: 1 Jun 19985 Jun 1998

Conference

ConferenceProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
Country/TerritoryUnited States
CityBerkeley, CA, USA
Period1/06/985/06/98

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