Low subthreshold slope in junctionless multigate transistors

Chi-Woo Lee, Alexei N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Rodrigo T. Doria, Jean-Pierre Colinge

Research output: Contribution to journalArticlepeer-review

227 Citations (Scopus)


The improvement of subthreshold slope due to impact ionization is compared between "standard" inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358131]

Original languageEnglish
Article number102106
Number of pages3
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 8 Mar 2010


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