Low subthreshold slope in junctionless multigate transistors

Chi-Woo Lee; Alexei N. Nazarov; Isabelle Ferain; Nima Dehdashti Akhavan; Ran Yan; Pedram Razavi; Ran Yu; Rodrigo T. Doria; Jean-Pierre Colinge

doi:10.1063/1.3358131

Low subthreshold slope in junctionless multigate transistors

Chi-Woo Lee, Alexei N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Rodrigo T. Doria, Jean-Pierre Colinge

School of Engineering

Research output: Contribution to journal › Article › peer-review

219 Citations (Scopus)

Abstract

The improvement of subthreshold slope due to impact ionization is compared between "standard" inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358131]

Original language	English
Article number	102106
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3358131
Publication status	Published - 8 Mar 2010

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title = "Low subthreshold slope in junctionless multigate transistors",

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AU - Lee, Chi-Woo

AU - Nazarov, Alexei N.

AU - Ferain, Isabelle

AU - Akhavan, Nima Dehdashti

AU - Yan, Ran

AU - Razavi, Pedram

AU - Yu, Ran

AU - Doria, Rodrigo T.

AU - Colinge, Jean-Pierre

PY - 2010/3/8

Y1 - 2010/3/8

N2 - The improvement of subthreshold slope due to impact ionization is compared between "standard" inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358131]

AB - The improvement of subthreshold slope due to impact ionization is compared between "standard" inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358131]

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KW - SILICON

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M3 - Article

SN - 0003-6951

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JO - Applied Physics Letters

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Low subthreshold slope in junctionless multigate transistors

Abstract

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