Long-Wavelength Infrared Photoconductor Technology Based on Epitaxially Grown Hg1-xCdxTe

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	SPIE Proceedings: Infrared Technology XX1
Place of Publication	Bellingham, Washington, USA
Publisher	SPIE
Pages	98-109
Volume	2552
Publication status	Published - 1995
Event	Long-Wavelength Infrared Photoconductor Technology Based on Epitaxially Grown Hg1-xCdxTe - Duration: 1 Jan 1995 → …

Conference	Long-Wavelength Infrared Photoconductor Technology Based on Epitaxially Grown Hg1-xCdxTe
Period	1/01/95 → …

Cite this

@inproceedings{4d47760d0c6b4dae9077992a990cddf4,

title = "Long-Wavelength Infrared Photoconductor Technology Based on Epitaxially Grown Hg1-xCdxTe",

author = "J.F. Siliquini and K.A. Fynn and C.A. Musca and Brett Nener and John Dell and Lorenzo Faraone",

year = "1995",

language = "English",

volume = "2552",

pages = "98--109",

booktitle = "SPIE Proceedings: Infrared Technology XX1",

publisher = "SPIE",

address = "United States",

note = "Long-Wavelength Infrared Photoconductor Technology Based on Epitaxially Grown Hg1-xCdxTe ; Conference date: 01-01-1995",

}

TY - GEN

T1 - Long-Wavelength Infrared Photoconductor Technology Based on Epitaxially Grown Hg1-xCdxTe

AU - Siliquini, J.F.

AU - Fynn, K.A.

AU - Musca, C.A.

AU - Nener, Brett

AU - Dell, John

AU - Faraone, Lorenzo

PY - 1995

Y1 - 1995

M3 - Conference paper

VL - 2552

SP - 98

EP - 109

BT - SPIE Proceedings: Infrared Technology XX1

PB - SPIE

CY - Bellingham, Washington, USA

T2 - Long-Wavelength Infrared Photoconductor Technology Based on Epitaxially Grown Hg1-xCdxTe

Y2 - 1 January 1995

ER -