Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

V. M. Ustinov; A. E. Zhukov; A. R. Kovsh; N. A. Maleev; S. S. Mikhrin; A. F. Tsatsul'nikov; M. V. Maximov; B. V. Volovik; D. A. Bedarev; P. S. Kop'ev; Z. I. Alferov; L. E. Vorob'ev; D. A. Firsov; A. A. Suvorova; I. P. Soshnikov; P. Werner; N. N. Ledentsov; D. Bimberg

doi:10.1016/S0026-2692(99)00083-X

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, A. F. Tsatsul'nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, P. S. Kop'ev, Z. I. Alferov, L. E. Vorob'ev, D. A. Firsov, A. A. Suvorova, I. P. Soshnikov, P. Werner, N. N. Ledentsov, D. Bimberg

Research output: Contribution to journal › Article › peer-review

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Abstract

We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InGaAs/GaAs quantum well led to achieving the 1.3 μm spontaneous emission and 1.26 μm lasing with extremely low threshold current density of 70 A/cm² at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 μm emission at room temperature. FIR emission simultaneous to 0.94 μm lasing has been observed in InGaAs quantum dot lasers due to intersubband career transitions in quantum dots.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Microelectronics Journal
Volume	31
Issue number	1
DOIs	https://doi.org/10.1016/S0026-2692(99)00083-X
Publication status	Published - Jan 2000
Externally published	Yes

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10.1016/S0026-2692(99)00083-X

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Ustinov, V. M., Zhukov, A. E., Kovsh, A. R., Maleev, N. A., Mikhrin, S. S., Tsatsul'nikov, A. F., Maximov, M. V., Volovik, B. V., Bedarev, D. A., Kop'ev, P. S., Alferov, Z. I., Vorob'ev, L. E., Firsov, D. A., Suvorova, A. A., Soshnikov, I. P., Werner, P., Ledentsov, N. N., & Bimberg, D. (2000). Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates. Microelectronics Journal, 31(1), 1-7. https://doi.org/10.1016/S0026-2692(99)00083-X

@article{2d8e9654fa60476294ba9379bdd8a7ae,

title = "Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates",

abstract = "We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InGaAs/GaAs quantum well led to achieving the 1.3 μm spontaneous emission and 1.26 μm lasing with extremely low threshold current density of 70 A/cm2 at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 μm emission at room temperature. FIR emission simultaneous to 0.94 μm lasing has been observed in InGaAs quantum dot lasers due to intersubband career transitions in quantum dots.",

author = "Ustinov, {V. M.} and Zhukov, {A. E.} and Kovsh, {A. R.} and Maleev, {N. A.} and Mikhrin, {S. S.} and Tsatsul'nikov, {A. F.} and Maximov, {M. V.} and Volovik, {B. V.} and Bedarev, {D. A.} and Kop'ev, {P. S.} and Alferov, {Z. I.} and Vorob'ev, {L. E.} and Firsov, {D. A.} and Suvorova, {A. A.} and Soshnikov, {I. P.} and P. Werner and Ledentsov, {N. N.} and D. Bimberg",

year = "2000",

month = jan,

doi = "10.1016/S0026-2692(99)00083-X",

language = "English",

volume = "31",

pages = "1--7",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier",

number = "1",

}

Ustinov, VM, Zhukov, AE, Kovsh, AR, Maleev, NA, Mikhrin, SS, Tsatsul'nikov, AF, Maximov, MV, Volovik, BV, Bedarev, DA, Kop'ev, PS, Alferov, ZI, Vorob'ev, LE, Firsov, DA, Suvorova, AA, Soshnikov, IP, Werner, P, Ledentsov, NN & Bimberg, D 2000, 'Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates', Microelectronics Journal, vol. 31, no. 1, pp. 1-7. https://doi.org/10.1016/S0026-2692(99)00083-X

TY - JOUR

T1 - Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

AU - Ustinov, V. M.

AU - Zhukov, A. E.

AU - Kovsh, A. R.

AU - Maleev, N. A.

AU - Mikhrin, S. S.

AU - Tsatsul'nikov, A. F.

AU - Maximov, M. V.

AU - Volovik, B. V.

AU - Bedarev, D. A.

AU - Kop'ev, P. S.

AU - Alferov, Z. I.

AU - Vorob'ev, L. E.

AU - Firsov, D. A.

AU - Suvorova, A. A.

AU - Soshnikov, I. P.

AU - Werner, P.

AU - Ledentsov, N. N.

AU - Bimberg, D.

PY - 2000/1

Y1 - 2000/1

N2 - We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InGaAs/GaAs quantum well led to achieving the 1.3 μm spontaneous emission and 1.26 μm lasing with extremely low threshold current density of 70 A/cm2 at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 μm emission at room temperature. FIR emission simultaneous to 0.94 μm lasing has been observed in InGaAs quantum dot lasers due to intersubband career transitions in quantum dots.

AB - We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InGaAs/GaAs quantum well led to achieving the 1.3 μm spontaneous emission and 1.26 μm lasing with extremely low threshold current density of 70 A/cm2 at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 μm emission at room temperature. FIR emission simultaneous to 0.94 μm lasing has been observed in InGaAs quantum dot lasers due to intersubband career transitions in quantum dots.

UR - http://www.scopus.com/inward/record.url?scp=0033897323&partnerID=8YFLogxK

U2 - 10.1016/S0026-2692(99)00083-X

DO - 10.1016/S0026-2692(99)00083-X

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AN - SCOPUS:0033897323

VL - 31

SP - 1

EP - 7

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0026-2692

IS - 1

ER -

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

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