Long-term environmental stability of residual stress of SiNx, SiOx, and Ge thin films prepared at low temperatures

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    Abstract

    Optical measurements of thin-film-stress-induced substrate bending have been employed in a characterization of long-term environmental stability of stress of low-temperature (
    Original languageEnglish
    Pages (from-to)26-30
    JournalMaterials Science and Engineering B
    Volume163
    DOIs
    Publication statusPublished - 2009

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