TY - JOUR
T1 - Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes
AU - Parish, Giacinta
AU - Kennedy, R.A.
AU - Umana Membreno, Gilberto A.
AU - Nener, Brett
PY - 2008
Y1 - 2008
N2 - The forward bias current–voltage (I–V) characteristics of n-GaN Schottky diodes on sapphire substrate were investigated over a wide temperature range of 70–500 K. For models based on localised regions of lowered Schottky barrier height, a distributed barrier height should be expected when these localised regions are comparable to or smaller in size than the depletion width. However, a suitable fit for the I–V curves, which exhibited anomalous two-step (kink) forward bias behaviour, was only obtained when modelling the leakier regions with a single reduced barrier height, by using a model of two discrete diodes in parallel.
AB - The forward bias current–voltage (I–V) characteristics of n-GaN Schottky diodes on sapphire substrate were investigated over a wide temperature range of 70–500 K. For models based on localised regions of lowered Schottky barrier height, a distributed barrier height should be expected when these localised regions are comparable to or smaller in size than the depletion width. However, a suitable fit for the I–V curves, which exhibited anomalous two-step (kink) forward bias behaviour, was only obtained when modelling the leakier regions with a single reduced barrier height, by using a model of two discrete diodes in parallel.
U2 - 10.1016/j.sse.2007.09.005
DO - 10.1016/j.sse.2007.09.005
M3 - Letter
SN - 0038-1101
VL - 52
SP - 171
EP - 174
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 2
ER -