LDD Depletion Effects in Thin-BOX FDSOI Devices with a Ground Plane

R. Yan; R. Duane; P. Razavi; A. Afzalian; I. Ferain; C. W. Lee; N. Dehdashti-Akhavan; K. Bourdelle; B. Y. Nguyen; J. P. Colinge

LDD Depletion Effects in Thin-BOX FDSOI Devices with a Ground Plane

R. Yan, R. Duane, P. Razavi, A. Afzalian, I. Ferain, C. W. Lee, N. Dehdashti-Akhavan, K. Bourdelle, B. Y. Nguyen, J. P. Colinge

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

3 Citations (Web of Science)

Abstract

In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.

Original language	English
Title of host publication	2009 IEEE INTERNATIONAL SOI CONFERENCE
Publisher	Wiley-IEEE Press
Pages	51-+
Number of pages	2
ISBN (Print)	978-1-4244-4256-0
Publication status	Published - 2009
Event	IEEE International SOI Conference 2009 - Foster City, Canada Duration: 5 Oct 2009 → 8 Oct 2009

Conference

Conference	IEEE International SOI Conference 2009
Country/Territory	Canada
City	Foster City
Period	5/10/09 → 8/10/09

Cite this

@inproceedings{e9e535c155994afca6f1502c1d2156f0,

title = "LDD Depletion Effects in Thin-BOX FDSOI Devices with a Ground Plane",

abstract = "In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.",

author = "R. Yan and R. Duane and P. Razavi and A. Afzalian and I. Ferain and Lee, {C. W.} and N. Dehdashti-Akhavan and K. Bourdelle and Nguyen, {B. Y.} and Colinge, {J. P.}",

year = "2009",

language = "English",

isbn = "978-1-4244-4256-0",

pages = "51--+",

booktitle = "2009 IEEE INTERNATIONAL SOI CONFERENCE",

publisher = "Wiley-IEEE Press",

note = "IEEE International SOI Conference 2009 ; Conference date: 05-10-2009 Through 08-10-2009",

}

TY - GEN

T1 - LDD Depletion Effects in Thin-BOX FDSOI Devices with a Ground Plane

AU - Yan, R.

AU - Duane, R.

AU - Razavi, P.

AU - Afzalian, A.

AU - Ferain, I.

AU - Lee, C. W.

AU - Dehdashti-Akhavan, N.

AU - Bourdelle, K.

AU - Nguyen, B. Y.

AU - Colinge, J. P.

PY - 2009

Y1 - 2009

N2 - In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.

AB - In this paper, we analyze LDD depletion effects in Fully-Depleted SOI (FDSOI) devices with thin-BOX and ground plane (GP). LDD engineering is introduced to reduce the source and drain resistance and threshold voltage shifts. Short-channel effects are rather insensitive to SOI layer thickness variations and remains well controlled for gate lengths down to 15nm.

M3 - Conference paper

SN - 978-1-4244-4256-0

SP - 51-+

BT - 2009 IEEE INTERNATIONAL SOI CONFERENCE

PB - Wiley-IEEE Press

T2 - IEEE International SOI Conference 2009

Y2 - 5 October 2009 through 8 October 2009

ER -

LDD Depletion Effects in Thin-BOX FDSOI Devices with a Ground Plane

Abstract

Conference

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