Lateral association of vertically-coupled quantum dots

A. F. Tsatsul'nikov; M. V. Belousov; N. A. Bert; A. Yu Egorov; P. S. Kop'ev; A. R. Kovsh; I. L. Krestnikov; N. N. Ledentsov; M. V. Maximov; A. A. Suvorova; V. M. Ustinov; B. V. Volovik; A. E. Zhukov; M. Grundmann; D. Bimberg; Zh I. Alferov

doi:10.1016/S0167-9317(98)00195-6

Lateral association of vertically-coupled quantum dots

A. F. Tsatsul'nikov, M. V. Belousov, N. A. Bert, A. Yu Egorov, P. S. Kop'ev, A. R. Kovsh, I. L. Krestnikov, N. N. Ledentsov, M. V. Maximov, A. A. Suvorova, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, M. Grundmann, D. Bimberg, Zh I. Alferov

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The structural and optical properties of vertically coupled In_0.5Ga_0.5 As quantum dots (QDs) in a GaAs matrix with a large number of QD stacks has been studied. We show that for large numbers of QD deposition cycles (N), in addition to vertical coupling, lateral coupling effects between the laterally neighboring QDs influence the electronic spectrum of the structure. Lateral coupling of vertically-coupled QDs or even geometrical merging of QDs in the upper rows result in an appearance of a new photoluminescence (PL) line associated with a radiative recombination of excitons via the states of laterally coupled QDs, which dominates the PL spectrum for large N.

Original language	English
Pages (from-to)	37-43
Number of pages	7
Journal	Microelectronic Engineering
Volume	43-44
DOIs	https://doi.org/10.1016/S0167-9317(98)00195-6
Publication status	Published - 1 Aug 1998
Externally published	Yes

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Tsatsul'nikov, A. F., Belousov, M. V., Bert, N. A., Egorov, A. Y., Kop'ev, P. S., Kovsh, A. R., Krestnikov, I. L., Ledentsov, N. N., Maximov, M. V., Suvorova, A. A., Ustinov, V. M., Volovik, B. V., Zhukov, A. E., Grundmann, M., Bimberg, D., & Alferov, Z. I. (1998). Lateral association of vertically-coupled quantum dots. Microelectronic Engineering, 43-44, 37-43. https://doi.org/10.1016/S0167-9317(98)00195-6

@article{d37307864ef64d0aa2aaeb2b50878d84,

title = "Lateral association of vertically-coupled quantum dots",

abstract = "The structural and optical properties of vertically coupled In0.5Ga0.5 As quantum dots (QDs) in a GaAs matrix with a large number of QD stacks has been studied. We show that for large numbers of QD deposition cycles (N), in addition to vertical coupling, lateral coupling effects between the laterally neighboring QDs influence the electronic spectrum of the structure. Lateral coupling of vertically-coupled QDs or even geometrical merging of QDs in the upper rows result in an appearance of a new photoluminescence (PL) line associated with a radiative recombination of excitons via the states of laterally coupled QDs, which dominates the PL spectrum for large N.",

keywords = "Molecular beam epitaxy, Photoluminescence, Quantum dot, Transmission electron microscopy",

author = "Tsatsul'nikov, {A. F.} and Belousov, {M. V.} and Bert, {N. A.} and Egorov, {A. Yu} and Kop'ev, {P. S.} and Kovsh, {A. R.} and Krestnikov, {I. L.} and Ledentsov, {N. N.} and Maximov, {M. V.} and Suvorova, {A. A.} and Ustinov, {V. M.} and Volovik, {B. V.} and Zhukov, {A. E.} and M. Grundmann and D. Bimberg and Alferov, {Zh I.}",

year = "1998",

month = aug,

day = "1",

doi = "10.1016/S0167-9317(98)00195-6",

language = "English",

volume = "43-44",

pages = "37--43",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Pergamon",

}

Tsatsul'nikov, AF, Belousov, MV, Bert, NA, Egorov, AY, Kop'ev, PS, Kovsh, AR, Krestnikov, IL, Ledentsov, NN, Maximov, MV, Suvorova, AA, Ustinov, VM, Volovik, BV, Zhukov, AE, Grundmann, M, Bimberg, D & Alferov, ZI 1998, 'Lateral association of vertically-coupled quantum dots', Microelectronic Engineering, vol. 43-44, pp. 37-43. https://doi.org/10.1016/S0167-9317(98)00195-6

TY - JOUR

T1 - Lateral association of vertically-coupled quantum dots

AU - Tsatsul'nikov, A. F.

AU - Belousov, M. V.

AU - Bert, N. A.

AU - Egorov, A. Yu

AU - Kop'ev, P. S.

AU - Kovsh, A. R.

AU - Krestnikov, I. L.

AU - Ledentsov, N. N.

AU - Maximov, M. V.

AU - Suvorova, A. A.

AU - Ustinov, V. M.

AU - Volovik, B. V.

AU - Zhukov, A. E.

AU - Grundmann, M.

AU - Bimberg, D.

AU - Alferov, Zh I.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - The structural and optical properties of vertically coupled In0.5Ga0.5 As quantum dots (QDs) in a GaAs matrix with a large number of QD stacks has been studied. We show that for large numbers of QD deposition cycles (N), in addition to vertical coupling, lateral coupling effects between the laterally neighboring QDs influence the electronic spectrum of the structure. Lateral coupling of vertically-coupled QDs or even geometrical merging of QDs in the upper rows result in an appearance of a new photoluminescence (PL) line associated with a radiative recombination of excitons via the states of laterally coupled QDs, which dominates the PL spectrum for large N.

AB - The structural and optical properties of vertically coupled In0.5Ga0.5 As quantum dots (QDs) in a GaAs matrix with a large number of QD stacks has been studied. We show that for large numbers of QD deposition cycles (N), in addition to vertical coupling, lateral coupling effects between the laterally neighboring QDs influence the electronic spectrum of the structure. Lateral coupling of vertically-coupled QDs or even geometrical merging of QDs in the upper rows result in an appearance of a new photoluminescence (PL) line associated with a radiative recombination of excitons via the states of laterally coupled QDs, which dominates the PL spectrum for large N.

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - Quantum dot

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=0342478596&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(98)00195-6

DO - 10.1016/S0167-9317(98)00195-6

M3 - Article

AN - SCOPUS:0342478596

SN - 0167-9317

VL - 43-44

SP - 37

EP - 43

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Lateral association of vertically-coupled quantum dots

Abstract

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