Lateral association of vertically coupled quantum dots

A. F. Tsatsul'nikov; A. Yu Egorov; A. E. Zhukov; A. R. Kovsh; V. M. Ustinov; N. N. Ledentsov; M. V. Maksimov; B. V. Volovik; A. A. Suvorova; N. A. Bert; P. S. Kop'ev

doi:10.1134/1.1187076

Lateral association of vertically coupled quantum dots

A. F. Tsatsul'nikov, A. Yu Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, P. S. Kop'ev

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19 Citations (Scopus)

Abstract

The modification produced in the structural and optical properties of vertically coupled In_0.5Ga_0.5As quantum dots in a GaAs matrix by increasing the number of deposited layers of quantum dots has been investigated. It was shown that the deposition of a sequence of In_0.5Ga_0.5As quantum-dot planes separated by narrow (of the order of the height of the quantum dots) GaAs layers gives rise to an interaction between neighboring vertically coupled quantum dots. This interaction shifts the photoluminescence line due to the recombination of nonequilibrium carriers via states of the quantum dots into the region of lower photon energies.

Original language	English
Pages (from-to)	722-725
Number of pages	4
Journal	Semiconductors
Volume	31
Issue number	7
DOIs	https://doi.org/10.1134/1.1187076
Publication status	Published - Jul 1997
Externally published	Yes

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title = "Lateral association of vertically coupled quantum dots",

abstract = "The modification produced in the structural and optical properties of vertically coupled In0.5Ga0.5As quantum dots in a GaAs matrix by increasing the number of deposited layers of quantum dots has been investigated. It was shown that the deposition of a sequence of In0.5Ga0.5As quantum-dot planes separated by narrow (of the order of the height of the quantum dots) GaAs layers gives rise to an interaction between neighboring vertically coupled quantum dots. This interaction shifts the photoluminescence line due to the recombination of nonequilibrium carriers via states of the quantum dots into the region of lower photon energies.",

author = "Tsatsul'nikov, {A. F.} and Egorov, {A. Yu} and Zhukov, {A. E.} and Kovsh, {A. R.} and Ustinov, {V. M.} and Ledentsov, {N. N.} and Maksimov, {M. V.} and Volovik, {B. V.} and Suvorova, {A. A.} and Bert, {N. A.} and Kop'ev, {P. S.}",

year = "1997",

month = jul,

doi = "10.1134/1.1187076",

language = "English",

volume = "31",

pages = "722--725",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "7",

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TY - JOUR

T1 - Lateral association of vertically coupled quantum dots

AU - Tsatsul'nikov, A. F.

AU - Egorov, A. Yu

AU - Zhukov, A. E.

AU - Kovsh, A. R.

AU - Ustinov, V. M.

AU - Ledentsov, N. N.

AU - Maksimov, M. V.

AU - Volovik, B. V.

AU - Suvorova, A. A.

AU - Bert, N. A.

AU - Kop'ev, P. S.

PY - 1997/7

Y1 - 1997/7

N2 - The modification produced in the structural and optical properties of vertically coupled In0.5Ga0.5As quantum dots in a GaAs matrix by increasing the number of deposited layers of quantum dots has been investigated. It was shown that the deposition of a sequence of In0.5Ga0.5As quantum-dot planes separated by narrow (of the order of the height of the quantum dots) GaAs layers gives rise to an interaction between neighboring vertically coupled quantum dots. This interaction shifts the photoluminescence line due to the recombination of nonequilibrium carriers via states of the quantum dots into the region of lower photon energies.

AB - The modification produced in the structural and optical properties of vertically coupled In0.5Ga0.5As quantum dots in a GaAs matrix by increasing the number of deposited layers of quantum dots has been investigated. It was shown that the deposition of a sequence of In0.5Ga0.5As quantum-dot planes separated by narrow (of the order of the height of the quantum dots) GaAs layers gives rise to an interaction between neighboring vertically coupled quantum dots. This interaction shifts the photoluminescence line due to the recombination of nonequilibrium carriers via states of the quantum dots into the region of lower photon energies.

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DO - 10.1134/1.1187076

M3 - Article

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SN - 1063-7826

VL - 31

SP - 722

EP - 725

JO - Semiconductors

JF - Semiconductors

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ER -

Lateral association of vertically coupled quantum dots

Abstract

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