Junctionless transistors are variable resistors controlled by a gate electrode. The silicon channel is a heavily doped nanowire that can be fully depleted to turn the device off. The electrical characteristics are identical to those of normal MOSFETs, but the physics is quite different. This paper compares the conduction mechanisms in three types of MOS devices: inversion-mode, accumulation-mode and junctionless MOSFET.
|Title of host publication
|SEMICONDUCTOR-ON-INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONS
|A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
|Springer-Verlag London Ltd.
|Number of pages
|Published - 2011