Junctionless Transistors: Physics and Properties

J. P. Colinge, C. W. Lee, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, A. Kranti, R. Yu

Research output: Chapter in Book/Conference paperChapterpeer-review

116 Citations (Scopus)

Abstract

Junctionless transistors are variable resistors controlled by a gate electrode. The silicon channel is a heavily doped nanowire that can be fully depleted to turn the device off. The electrical characteristics are identical to those of normal MOSFETs, but the physics is quite different. This paper compares the conduction mechanisms in three types of MOS devices: inversion-mode, accumulation-mode and junctionless MOSFET.

Original languageEnglish
Title of host publicationSEMICONDUCTOR-ON-INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONS
EditorsA Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
PublisherSpringer-Verlag London Ltd.
Pages187-200
Number of pages14
ISBN (Print)978-3-642-15867-4
DOIs
Publication statusPublished - 2011

Publication series

NameEngineering Materials
PublisherSPRINGER-VERLAG BERLIN
ISSN (Print)1612-1317

Fingerprint

Dive into the research topics of 'Junctionless Transistors: Physics and Properties'. Together they form a unique fingerprint.

Cite this