Junctionless multigate field-effect transistor

Chi-Woo Lee, Aryan Afzalian, Nima Dehdashti Akhavan, Ran Yan, Isabelle Ferain, Jean-Pierre Colinge

Research output: Contribution to journalArticlepeer-review

814 Citations (Scopus)

Abstract

This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully depleted and turned off by the gate. Since this device has no junctions, it has simpler fabrication process, less variability, and better electrical properties than classical MOS devices with source and drain PN junctions.

Original languageEnglish
Article number053511
Number of pages2
JournalApplied Physics Letters
Volume94
Issue number5
DOIs
Publication statusPublished - 2 Feb 2009

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