Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Peng Wang; Wenwu Pan; Kai Wang; Xiaoyan Wu; Li Yue; Qian Gong; Shumin Wang

doi:10.1063/1.4937412

Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Peng Wang, Wenwu Pan, Kai Wang, Xiaoyan Wu, Li Yue, Qian Gong, Shumin Wang

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

Original language	English
Pages (from-to)	127104
Journal	AIP Advances
Volume	5
Issue number	12
DOIs	https://doi.org/10.1063/1.4937412
Publication status	Published - 1 Dec 2015
Externally published	Yes

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http://adsabs.harvard.edu/abs/2015AIPA....5l7104W

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title = "Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence",

abstract = "InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.",

author = "Peng Wang and Wenwu Pan and Kai Wang and Xiaoyan Wu and Li Yue and Qian Gong and Shumin Wang",

year = "2015",

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journal = "AIP Advances",

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TY - JOUR

T1 - Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

AU - Wang, Peng

AU - Pan, Wenwu

AU - Wang, Kai

AU - Wu, Xiaoyan

AU - Yue, Li

AU - Gong, Qian

AU - Wang, Shumin

PY - 2015/12/1

Y1 - 2015/12/1

N2 - InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

AB - InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

U2 - 10.1063/1.4937412

DO - 10.1063/1.4937412

M3 - Article

SN - 2158-3226

VL - 5

SP - 127104

JO - AIP Advances

JF - AIP Advances

IS - 12

ER -

Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Abstract

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