Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 549-556 |
| Journal | Journal of Microelectromechanical Systems |
| Volume | 25 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2016 |
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Investigation of Thermal Expansion Effects on Si-Based MEMS Structures. / Brookshire, Kirsten; Rafiei, Ramin; Martyniuk, Mariusz; Silva, Dilusha; Faraone, Lorenzo; Liu, Yinong.
In: Journal of Microelectromechanical Systems, Vol. 25, No. 3, 2016, p. 549-556.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of Thermal Expansion Effects on Si-Based MEMS Structures
AU - Brookshire, Kirsten
AU - Rafiei, Ramin
AU - Martyniuk, Mariusz
AU - Silva, Dilusha
AU - Faraone, Lorenzo
AU - Liu, Yinong
PY - 2016
Y1 - 2016
N2 - © 1992-2012 IEEE.This paper presents a study of the effects of stress and thermal expansion of inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) amorphous Si thin films on low-temperature microelectromechanical systems test structures. Experimental data were used in conjunction with finite-element modeling (FEM) to predict deformation in simple microstructures across a wide temperature range from 85 to 300 K. Temperature dependence of residual stress and the coefficient of thermal expansion (CTE) of ICPCVD Si thin films was investigated by characterizing the curvature of bilayer thin-film samples through the use of optical profilometry at low temperature. Extracted parameters were used in an FEM package to confirm the experimental results by correlating with observed deformation of fabricated test structures. It is demonstrated that the experimentally determined CTE enables accurate modeling of the mechanical behavior of thin-film microstructures across a wide range of temperatures. [2015-0175]
AB - © 1992-2012 IEEE.This paper presents a study of the effects of stress and thermal expansion of inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) amorphous Si thin films on low-temperature microelectromechanical systems test structures. Experimental data were used in conjunction with finite-element modeling (FEM) to predict deformation in simple microstructures across a wide temperature range from 85 to 300 K. Temperature dependence of residual stress and the coefficient of thermal expansion (CTE) of ICPCVD Si thin films was investigated by characterizing the curvature of bilayer thin-film samples through the use of optical profilometry at low temperature. Extracted parameters were used in an FEM package to confirm the experimental results by correlating with observed deformation of fabricated test structures. It is demonstrated that the experimentally determined CTE enables accurate modeling of the mechanical behavior of thin-film microstructures across a wide range of temperatures. [2015-0175]
U2 - 10.1109/JMEMS.2016.2548485
DO - 10.1109/JMEMS.2016.2548485
M3 - Article
VL - 25
SP - 549
EP - 556
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
SN - 1057-7157
IS - 3
ER -