Investigation of Thermal Expansion Effects on Si-Based MEMS Structures

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    Abstract

    © 1992-2012 IEEE.This paper presents a study of the effects of stress and thermal expansion of inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) amorphous Si thin films on low-temperature microelectromechanical systems test structures. Experimental data were used in conjunction with finite-element modeling (FEM) to predict deformation in simple microstructures across a wide temperature range from 85 to 300 K. Temperature dependence of residual stress and the coefficient of thermal expansion (CTE) of ICPCVD Si thin films was investigated by characterizing the curvature of bilayer thin-film samples through the use of optical profilometry at low temperature. Extracted parameters were used in an FEM package to confirm the experimental results by correlating with observed deformation of fabricated test structures. It is demonstrated that the experimentally determined CTE enables accurate modeling of the mechanical behavior of thin-film microstructures across a wide range of temperatures. [2015-0175]
    Original languageEnglish
    Pages (from-to)549-556
    JournalJournal of Microelectromechanical Systems
    Volume25
    Issue number3
    DOIs
    Publication statusPublished - 2016

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    MEMS
    Thermal expansion
    Thin films
    Inductively coupled plasma
    Temperature
    Vapors
    Microstructure
    Profilometry
    Residual stresses

    Cite this

    @article{66459d87d5284700bb62e61d39c1c705,
    title = "Investigation of Thermal Expansion Effects on Si-Based MEMS Structures",
    abstract = "{\circledC} 1992-2012 IEEE.This paper presents a study of the effects of stress and thermal expansion of inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) amorphous Si thin films on low-temperature microelectromechanical systems test structures. Experimental data were used in conjunction with finite-element modeling (FEM) to predict deformation in simple microstructures across a wide temperature range from 85 to 300 K. Temperature dependence of residual stress and the coefficient of thermal expansion (CTE) of ICPCVD Si thin films was investigated by characterizing the curvature of bilayer thin-film samples through the use of optical profilometry at low temperature. Extracted parameters were used in an FEM package to confirm the experimental results by correlating with observed deformation of fabricated test structures. It is demonstrated that the experimentally determined CTE enables accurate modeling of the mechanical behavior of thin-film microstructures across a wide range of temperatures. [2015-0175]",
    author = "Kirsten Brookshire and Ramin Rafiei and Mariusz Martyniuk and Dilusha Silva and Lorenzo Faraone and Yinong Liu",
    year = "2016",
    doi = "10.1109/JMEMS.2016.2548485",
    language = "English",
    volume = "25",
    pages = "549--556",
    journal = "Journal of Microelectromechanical Systems",
    issn = "1057-7157",
    publisher = "IEEE, Institute of Electrical and Electronics Engineers",
    number = "3",

    }

    TY - JOUR

    T1 - Investigation of Thermal Expansion Effects on Si-Based MEMS Structures

    AU - Brookshire, Kirsten

    AU - Rafiei, Ramin

    AU - Martyniuk, Mariusz

    AU - Silva, Dilusha

    AU - Faraone, Lorenzo

    AU - Liu, Yinong

    PY - 2016

    Y1 - 2016

    N2 - © 1992-2012 IEEE.This paper presents a study of the effects of stress and thermal expansion of inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) amorphous Si thin films on low-temperature microelectromechanical systems test structures. Experimental data were used in conjunction with finite-element modeling (FEM) to predict deformation in simple microstructures across a wide temperature range from 85 to 300 K. Temperature dependence of residual stress and the coefficient of thermal expansion (CTE) of ICPCVD Si thin films was investigated by characterizing the curvature of bilayer thin-film samples through the use of optical profilometry at low temperature. Extracted parameters were used in an FEM package to confirm the experimental results by correlating with observed deformation of fabricated test structures. It is demonstrated that the experimentally determined CTE enables accurate modeling of the mechanical behavior of thin-film microstructures across a wide range of temperatures. [2015-0175]

    AB - © 1992-2012 IEEE.This paper presents a study of the effects of stress and thermal expansion of inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) amorphous Si thin films on low-temperature microelectromechanical systems test structures. Experimental data were used in conjunction with finite-element modeling (FEM) to predict deformation in simple microstructures across a wide temperature range from 85 to 300 K. Temperature dependence of residual stress and the coefficient of thermal expansion (CTE) of ICPCVD Si thin films was investigated by characterizing the curvature of bilayer thin-film samples through the use of optical profilometry at low temperature. Extracted parameters were used in an FEM package to confirm the experimental results by correlating with observed deformation of fabricated test structures. It is demonstrated that the experimentally determined CTE enables accurate modeling of the mechanical behavior of thin-film microstructures across a wide range of temperatures. [2015-0175]

    U2 - 10.1109/JMEMS.2016.2548485

    DO - 10.1109/JMEMS.2016.2548485

    M3 - Article

    VL - 25

    SP - 549

    EP - 556

    JO - Journal of Microelectromechanical Systems

    JF - Journal of Microelectromechanical Systems

    SN - 1057-7157

    IS - 3

    ER -