Abstract
The first TiO2-based memristor was implemented in 2008 by HP company in Nano-scale to present the predictable behavior of the memristor and voltage-current (V-I) hysteresis curve. Many aspects of this device are unknown yet and having an accurate model can help to control the voltage and current of this device. For this purpose, some of electronic-based soft wares can help like PSPICE or Workbench. This paper is modeling the resistive behavior of this component with non-linear ionic deviance of the TiO2 by simple codes in MATLAB to be controlled by voltage or current. Some of the simulation results are presented with model adjustments for the specifications of this component.
| Original language | English |
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| Pages (from-to) | 303-311 |
| Number of pages | 9 |
| Journal | European Journal of Science and Technology |
| Volume | 19 |
| Early online date | 26 May 2020 |
| DOIs | |
| Publication status | Published - 31 Aug 2020 |