Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe

I. Madni, G. A.U. Membreno, W. Lei, L. Faraone

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Undoped mid-wave infrared Hg1−xCdxSe epitaxial layers have been grown to a nominal thickness of 8–14 μm on GaSb (211)B substrates by molecular beam epitaxy (MBE) using constant beam equivalent pressure ratios. The effects of growth temperature from 70°C to 120°C on epilayer quality and its electronic parameters has been examined using x-ray diffraction (XRD) rocking curves, atomic force microscopy, Nomarski optical imaging, photoconductive decay measurements, and variable magnetic field Hall effect analysis. For samples grown at 70°C, the measured values of XRD rocking curve full width at half maximum (FWHM) (116 arcsec), root mean square (RMS) surface roughness (2.7 nm), electron mobility (6.6 × 104 cm2 V−1 s−1 at 130 K), minority carrier lifetime (∼ 2 μs at 130 K), and background n-type doping (∼ 3 × 1016 cm−3 at 130 K), indicate device-grade material quality that is significantly superior to that previously published in the open literature. All of these parameters were found to degrade monotonically with increasing growth temperature, although a reasonably wide growth window exists from 70°C to 90°C, within which good quality HgCdSe can be grown via MBE.

Original languageEnglish
Pages (from-to)5691-5698
Number of pages8
JournalJournal of Electronic Materials
Volume47
Issue number10
DOIs
Publication statusPublished - 1 Oct 2018

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Growth temperature
Molecular beam epitaxy
molecular beam epitaxy
Diffraction
Infrared radiation
X rays
Carrier lifetime
Epilayers
Electron mobility
Epitaxial layers
Hall effect
x ray diffraction
Full width at half maximum
Atomic force microscopy
pressure ratio
Surface roughness
Doping (additives)
curves
Magnetic fields
carrier lifetime

Cite this

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title = "Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe",
abstract = "Undoped mid-wave infrared Hg1−xCdxSe epitaxial layers have been grown to a nominal thickness of 8–14 μm on GaSb (211)B substrates by molecular beam epitaxy (MBE) using constant beam equivalent pressure ratios. The effects of growth temperature from 70°C to 120°C on epilayer quality and its electronic parameters has been examined using x-ray diffraction (XRD) rocking curves, atomic force microscopy, Nomarski optical imaging, photoconductive decay measurements, and variable magnetic field Hall effect analysis. For samples grown at 70°C, the measured values of XRD rocking curve full width at half maximum (FWHM) (116 arcsec), root mean square (RMS) surface roughness (2.7 nm), electron mobility (6.6 × 104 cm2 V−1 s−1 at 130 K), minority carrier lifetime (∼ 2 μs at 130 K), and background n-type doping (∼ 3 × 1016 cm−3 at 130 K), indicate device-grade material quality that is significantly superior to that previously published in the open literature. All of these parameters were found to degrade monotonically with increasing growth temperature, although a reasonably wide growth window exists from 70°C to 90°C, within which good quality HgCdSe can be grown via MBE.",
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Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe. / Madni, I.; Membreno, G. A.U.; Lei, W.; Faraone, L.

In: Journal of Electronic Materials, Vol. 47, No. 10, 01.10.2018, p. 5691-5698.

Research output: Contribution to journalArticle

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