Investigation of laser beam-induced current techniques for heterojunction photodiode characterization

D.A. Redfern; W. Fang; K. Ito; G. Bahir; Charles Musca; John Dell; Lorenzo Faraone

doi:10.1063/1.1993754

Investigation of laser beam-induced current techniques for heterojunction photodiode characterization

D.A. Redfern, W. Fang, K. Ito, G. Bahir, Charles Musca, John Dell, Lorenzo Faraone

Graduate Research School

Research output: Contribution to journal › Article › peer-review

6 Citations (Web of Science)

Abstract

A reduced model is developed that has significant advantages over the full drift-diffusion model for the simulation of laser beam-induced current (LBIC) signals in the presence of heterojunctions. The model determines the contribution to the LBIC signal that would occur from photogeneration at any position within the semiconductor, and is particularly useful for heterostructures where judicious choice of illumination wavelength can result in photogeneration at different depths within the device structure. The reduced model is used to examine the basic features of LBIC as applied to two types of planar P-n HgCdTe heterojunction photodiode structures. In particular, the question of correctly identifying erroneous device structures formed during the fabrication process is addressed, and experimental measurements are presented to support the simulation results. (c) 2005 American Institute of Physics.

Original language	English
Pages (from-to)	034501-1 to 034501-9
Journal	Journal of Applied Physics
Volume	98
Issue number	3
DOIs	https://doi.org/10.1063/1.1993754
Publication status	Published - 2005

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@article{aff322092e9a41dda64d4e26229d4658,

title = "Investigation of laser beam-induced current techniques for heterojunction photodiode characterization",

abstract = "A reduced model is developed that has significant advantages over the full drift-diffusion model for the simulation of laser beam-induced current (LBIC) signals in the presence of heterojunctions. The model determines the contribution to the LBIC signal that would occur from photogeneration at any position within the semiconductor, and is particularly useful for heterostructures where judicious choice of illumination wavelength can result in photogeneration at different depths within the device structure. The reduced model is used to examine the basic features of LBIC as applied to two types of planar P-n HgCdTe heterojunction photodiode structures. In particular, the question of correctly identifying erroneous device structures formed during the fabrication process is addressed, and experimental measurements are presented to support the simulation results. (c) 2005 American Institute of Physics.",

author = "D.A. Redfern and W. Fang and K. Ito and G. Bahir and Charles Musca and John Dell and Lorenzo Faraone",

year = "2005",

doi = "10.1063/1.1993754",

language = "English",

volume = "98",

pages = "034501--1 to 034501--9",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Investigation of laser beam-induced current techniques for heterojunction photodiode characterization

AU - Redfern, D.A.

AU - Fang, W.

AU - Ito, K.

AU - Bahir, G.

AU - Musca, Charles

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2005

Y1 - 2005

N2 - A reduced model is developed that has significant advantages over the full drift-diffusion model for the simulation of laser beam-induced current (LBIC) signals in the presence of heterojunctions. The model determines the contribution to the LBIC signal that would occur from photogeneration at any position within the semiconductor, and is particularly useful for heterostructures where judicious choice of illumination wavelength can result in photogeneration at different depths within the device structure. The reduced model is used to examine the basic features of LBIC as applied to two types of planar P-n HgCdTe heterojunction photodiode structures. In particular, the question of correctly identifying erroneous device structures formed during the fabrication process is addressed, and experimental measurements are presented to support the simulation results. (c) 2005 American Institute of Physics.

AB - A reduced model is developed that has significant advantages over the full drift-diffusion model for the simulation of laser beam-induced current (LBIC) signals in the presence of heterojunctions. The model determines the contribution to the LBIC signal that would occur from photogeneration at any position within the semiconductor, and is particularly useful for heterostructures where judicious choice of illumination wavelength can result in photogeneration at different depths within the device structure. The reduced model is used to examine the basic features of LBIC as applied to two types of planar P-n HgCdTe heterojunction photodiode structures. In particular, the question of correctly identifying erroneous device structures formed during the fabrication process is addressed, and experimental measurements are presented to support the simulation results. (c) 2005 American Institute of Physics.

U2 - 10.1063/1.1993754

DO - 10.1063/1.1993754

M3 - Article

SN - 0021-8979

VL - 98

SP - 034501-1 to 034501-9

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Investigation of laser beam-induced current techniques for heterojunction photodiode characterization

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