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Abstract
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
The interfacial reaction products and stress distribution in a selective laser melted Al12Si/SiC composite are studied using confocal Raman microscopy. Results reveal that needle-like Al4C3 and equiaxed Si are located at the interface between the Al matrix and SiC particles. This reaction is triggered by the high temperature within the SiC due to its high laser absorptivity. Raman frequency shifts to lower wavenumber are observed in both the SiC and Si, suggesting the existence of tensile stress within the interface. The tensile stress in SiC is higher in the build direction than in the direction perpendicular to the build direction. No such difference is observed in the Si. The reason is ascribed to the Gaussian distribution of the laser energy density and stress relief through the interfacial reaction.
Original language | English |
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Pages (from-to) | 1337-1341 |
Number of pages | 5 |
Journal | Advanced Engineering Materials |
Volume | 18 |
Issue number | 8 |
Early online date | 3 Jun 2016 |
DOIs | |
Publication status | Published - 1 Aug 2016 |
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Dive into the research topics of 'Investigation of Interfacial Reaction Products and Stress Distribution in Selective Laser Melted Al12Si/SiC Composite Using Confocal Raman Microscopy'. Together they form a unique fingerprint.Projects
- 1 Finished
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Selective Laser Melting of Bulk Metallic Glass
Sercombe, T., Zhang, L. & Eckert, J.
1/01/13 → 31/12/16
Project: Research