Chemistry
Nitride
100%
Inductively Coupled Plasma
100%
Silicon
100%
Chemical Bond
15%
Concentration
15%
Interface Trap
10%
Trap Density Measurement
10%
Chemical Passivation
10%
Reaction Temperature
10%
Ion
5%
Charge Density
5%
Epitaxial Film
5%
Absorption Spectrum
5%
Amorphous Material
5%
Metal
5%
Inductively Coupled Plasma Method
5%
Analytical Method
5%
Structure
5%
Ammonia
5%
Density
5%
Material Science
Surface Passivation
100%
Plasma-Enhanced Chemical Vapor Deposition
100%
Silicon Nitride
100%
Density
20%
Temperature
10%
Passivation
10%
Thin Films
5%
Gallium Arsenide
5%
Epitaxial Layer
5%
Devices
5%
Material
5%
Metal
5%
Amorphous Material
5%
Absorbance
5%
Electrical Property
5%
Engineering
Inductively Coupled Plasma
100%
Plasma Enhanced Chemical Vapor Deposition
100%
Interface Trap
10%
Deposition Condition
10%
Performance
10%
Characteristics
10%
Density
10%
Thin Films
5%
Deposition Temperature
5%
Measurement
5%
Deposited Film
5%
Passivation
5%
Passivation Layer
5%
Charge Density
5%
Epitaxial Film
5%
Substrate Temperature
5%
Frequency Characteristic
5%
Si Substrate
5%
Deposition System
5%
Plasma Source
5%
Ion Energy
5%
Gaas Substrate
5%
Properties
5%
High Density
5%
High Frequency
5%
Low Frequency
5%
Physics
Deposition
15%
Passivity
10%
Temperature
10%
Performance
10%
Frequencies
10%
Substrates
10%
Ion
5%
Thin Films
5%
Minerals
5%
Ratios
5%
Metal
5%
Society
5%
Spectra
5%