Investigating the effects of capping layer on optical gain of nitride based semiconductor nanostructure lasers

E. Annabi Milani, V. Mohadesi, Asghar Asgari Tokaldani

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    In this study, the effects of GaN capping layer on the behaviour of AlGaN/GaN nanostructure based laser is considered. We have employed the self-consistent solution of Poisson and Schrodinger equations for calculation of the energy levels, wave functions and conduction and valance bands profile. The impact of different thicknesses of the capping layer has been studied for sheet carrier density, then on optical gain. The results indicate that, by increasing the thickness of the cap layer, the optical gain decreases.

    Original languageEnglish
    Pages (from-to)236-240
    Number of pages5
    JournalOptical Materials
    Volume66
    DOIs
    Publication statusPublished - 1 Apr 2017

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