Intra-atomic photoluminescence at 1.41 eV of substitutional Mn in GaMnN of high optical quality

J. Zenneck, T. Niermann, D. Mai, M. Roever, Martin Kocan, J. Malindretos, M. Seibt, A. Rizzi, N. Kaluza, H. Hardtdegen

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    28 Citations (Web of Science)

    Abstract

    We report on a characteristic photoluminescence feature of the substitutional Mn in high quality GaMnN layers. The lattice site was identified using atom localization by channeling enhanced microanalysis with a transmission electron microscope. It shows that 96.5%+/- 5.0% of the Mn atoms are incorporated on the substitutional Ga site. In photoluminescence a feature appears at 1.41 eV with a phonon sideband related to the GaN matrix. The temperature evolution is characteristic of an intra-atomic transition and it is assigned to the internal transition E-5 -> T-5(2) of the Mn3+ ion. The assignment is supported by absorption experiments. The persistence of the clear PL signal up to about 1% Mn concentration is proposed to be a fingerprint of high quality diluted GaMnN. (c) 2007 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)063504-1 - 063504-3
    JournalJournal of Applied Physics
    Volume101
    DOIs
    Publication statusPublished - 2007

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