Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy

A.P. Baraban; V.A. Dmitriev; V.E. Drozd; V.A. Prokofiev; Sergey N. Samarin; E.O. Filatova

doi:10.1063/1.4941270

Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy

A.P. Baraban
, V.A. Dmitriev
, V.E. Drozd
, V.A. Prokofiev
, Sergey N. Samarin
, E.O. Filatova

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

© 2016 AIP Publishing LLC. We studied formation of the SiO2-T2O5 interface in the Si-SiO2-Ta2O5 structure using Cathodoluminescence Spectroscopy (CLS). Analyzing the evolution of CLS spectrum of the Si-SiO2 structure while depositing the Ta2O5 layer allowed to estimate an optical transmittance of the Ta2O5 layer and its band gap. Spectral features related to the formation of the SiO2-Ta2O5 interface were identified by comparison of the experimental CL spectrum of the Si-SiO2-Ta2O5 structure and its simulated counterpart. This formation involves a decomposition of silanol groups at the outer surface of the SO2 layer and creation of the SixTayO-type layer containing luminescence centers with the emission band centered at 3 eV photon energy.

Original language	English
Article number	055307
Number of pages	5
Journal	Journal of Applied Physics
Volume	119
Issue number	5
DOIs	https://doi.org/10.1063/1.4941270
Publication status	Published - 7 Feb 2016

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title = "Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy",

abstract = "{\textcopyright} 2016 AIP Publishing LLC. We studied formation of the SiO2-T2O5 interface in the Si-SiO2-Ta2O5 structure using Cathodoluminescence Spectroscopy (CLS). Analyzing the evolution of CLS spectrum of the Si-SiO2 structure while depositing the Ta2O5 layer allowed to estimate an optical transmittance of the Ta2O5 layer and its band gap. Spectral features related to the formation of the SiO2-Ta2O5 interface were identified by comparison of the experimental CL spectrum of the Si-SiO2-Ta2O5 structure and its simulated counterpart. This formation involves a decomposition of silanol groups at the outer surface of the SO2 layer and creation of the SixTayO-type layer containing luminescence centers with the emission band centered at 3 eV photon energy.",

author = "A.P. Baraban and V.A. Dmitriev and V.E. Drozd and V.A. Prokofiev and Samarin, \{Sergey N.\} and E.O. Filatova",

year = "2016",

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day = "7",

doi = "10.1063/1.4941270",

language = "English",

volume = "119",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy

AU - Baraban, A.P.

AU - Dmitriev, V.A.

AU - Drozd, V.E.

AU - Prokofiev, V.A.

AU - Samarin, Sergey N.

AU - Filatova, E.O.

PY - 2016/2/7

Y1 - 2016/2/7

N2 - © 2016 AIP Publishing LLC. We studied formation of the SiO2-T2O5 interface in the Si-SiO2-Ta2O5 structure using Cathodoluminescence Spectroscopy (CLS). Analyzing the evolution of CLS spectrum of the Si-SiO2 structure while depositing the Ta2O5 layer allowed to estimate an optical transmittance of the Ta2O5 layer and its band gap. Spectral features related to the formation of the SiO2-Ta2O5 interface were identified by comparison of the experimental CL spectrum of the Si-SiO2-Ta2O5 structure and its simulated counterpart. This formation involves a decomposition of silanol groups at the outer surface of the SO2 layer and creation of the SixTayO-type layer containing luminescence centers with the emission band centered at 3 eV photon energy.

AB - © 2016 AIP Publishing LLC. We studied formation of the SiO2-T2O5 interface in the Si-SiO2-Ta2O5 structure using Cathodoluminescence Spectroscopy (CLS). Analyzing the evolution of CLS spectrum of the Si-SiO2 structure while depositing the Ta2O5 layer allowed to estimate an optical transmittance of the Ta2O5 layer and its band gap. Spectral features related to the formation of the SiO2-Ta2O5 interface were identified by comparison of the experimental CL spectrum of the Si-SiO2-Ta2O5 structure and its simulated counterpart. This formation involves a decomposition of silanol groups at the outer surface of the SO2 layer and creation of the SixTayO-type layer containing luminescence centers with the emission band centered at 3 eV photon energy.

U2 - 10.1063/1.4941270

DO - 10.1063/1.4941270

M3 - Article

SN - 0021-8979

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 055307

ER -

Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy

Abstract

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