Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy

A.P. Baraban, V.A. Dmitriev, V.E. Drozd, V.A. Prokofiev, Sergey N. Samarin, E.O. Filatova

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    © 2016 AIP Publishing LLC. We studied formation of the SiO2-T2O5 interface in the Si-SiO2-Ta2O5 structure using Cathodoluminescence Spectroscopy (CLS). Analyzing the evolution of CLS spectrum of the Si-SiO2 structure while depositing the Ta2O5 layer allowed to estimate an optical transmittance of the Ta2O5 layer and its band gap. Spectral features related to the formation of the SiO2-Ta2O5 interface were identified by comparison of the experimental CL spectrum of the Si-SiO2-Ta2O5 structure and its simulated counterpart. This formation involves a decomposition of silanol groups at the outer surface of the SO2 layer and creation of the SixTayO-type layer containing luminescence centers with the emission band centered at 3 eV photon energy.
    Original languageEnglish
    Article number055307
    Number of pages5
    JournalJournal of Applied Physics
    Issue number5
    Publication statusPublished - 2016


    Cite this

    Baraban, A. P., Dmitriev, V. A., Drozd, V. E., Prokofiev, V. A., Samarin, S. N., & Filatova, E. O. (2016). Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy. Journal of Applied Physics, 119(5), [055307].