Influence of Zn                                                 2+                                                  doping on the lattice defects and photoluminescence studies of Sr                                                 2                                                 CeO                                                 4                                                 :Eu                                                 3+                                                  nanophosphor: Applications for data encryption strategies

H. S. Sudheendra; G. P. Darshan; R. B. Basavaraj; Yashwanth V. Naik; H. B. Premakumar; H. Nagabhushana; J. F. Williams; K. Hareesh; M. K. Kokila

doi:10.1016/j.optmat.2019.02.026

Influence of Zn ²⁺ doping on the lattice defects and photoluminescence studies of Sr ₂ CeO ₄ :Eu ³⁺ nanophosphor: Applications for data encryption strategies

H. S. Sudheendra, G. P. Darshan, R. B. Basavaraj, Yashwanth V. Naik, H. B. Premakumar, H. Nagabhushana, J. F. Williams, K. Hareesh, M. K. Kokila

Physics

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10 Citations (Scopus)

Abstract

In the present work, luminescent Sr ₂ CeO ₄ :Eu ³⁺ (5 mol %), Zn ²⁺ (0.25–3 mol %) nanophosphors were fabricated by the ultrasound irradiated sonochemical method. The samples prepared with 3 h ultrasound treatment exhibit well crystalline and single phase Sr ₂ CeO ₄ . The dumbbell shaped morphology of the prepared samples was elucidated from both SEM and TEM results. The energy band gap of the prepared samples was estimated and found to be in the range ∼3.18–3.63 eV. The incorporation of Zn ²⁺ greatly influences the defect and emission intensities, as revealed from photoluminescence and positron lifetime spectroscopy measurements. The enhancement in the photoluminescence emission intensity after Zn ²⁺ incorporation was observed, which may be due to the creation of defects and efficient energy transfer between Zn ²⁺ and Eu ³⁺ or defects that can act as emission centers. The positron lifetime spectroscopy qualitatively explains the concentration of defects (vacancy and voids) which are induced by Zn ²⁺ co-doping. The encryption strategies are provided using the photoluminescent chalk for high level information protection. We believe that the versatile, convenient and user-friendly strategy demonstrated herein will open a new insight for on-site information protection.

Original language	English
Pages (from-to)	159-171
Number of pages	13
Journal	Optical Materials
Volume	90
DOIs	https://doi.org/10.1016/j.optmat.2019.02.026
Publication status	Published - 1 Apr 2019

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10.1016/j.optmat.2019.02.026

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Sudheendra, H. S., Darshan, G. P., Basavaraj, R. B., Naik, Y. V., Premakumar, H. B., Nagabhushana, H., Williams, J. F., Hareesh, K., & Kokila, M. K. (2019). Influence of Zn ²⁺ doping on the lattice defects and photoluminescence studies of Sr ₂ CeO ₄ :Eu ³⁺ nanophosphor: Applications for data encryption strategies. Optical Materials, 90, 159-171. https://doi.org/10.1016/j.optmat.2019.02.026

Sudheendra, H. S. ; Darshan, G. P. ; Basavaraj, R. B. ; Naik, Yashwanth V. ; Premakumar, H. B. ; Nagabhushana, H. ; Williams, J. F. ; Hareesh, K. ; Kokila, M. K. / Influence of Zn ²⁺ doping on the lattice defects and photoluminescence studies of Sr ₂ CeO ₄ :Eu ³⁺ nanophosphor : Applications for data encryption strategies. In: Optical Materials. 2019 ; Vol. 90. pp. 159-171.

@article{df4bd15fcd58417f9f314107aa02704f,

title = "Influence of Zn 2+ doping on the lattice defects and photoluminescence studies of Sr 2 CeO 4 :Eu 3+ nanophosphor: Applications for data encryption strategies",

abstract = " In the present work, luminescent Sr 2 CeO 4 :Eu 3+ (5 mol %), Zn 2+ (0.25–3 mol %) nanophosphors were fabricated by the ultrasound irradiated sonochemical method. The samples prepared with 3 h ultrasound treatment exhibit well crystalline and single phase Sr 2 CeO 4 . The dumbbell shaped morphology of the prepared samples was elucidated from both SEM and TEM results. The energy band gap of the prepared samples was estimated and found to be in the range ∼3.18–3.63 eV. The incorporation of Zn 2+ greatly influences the defect and emission intensities, as revealed from photoluminescence and positron lifetime spectroscopy measurements. The enhancement in the photoluminescence emission intensity after Zn 2+ incorporation was observed, which may be due to the creation of defects and efficient energy transfer between Zn 2+ and Eu 3+ or defects that can act as emission centers. The positron lifetime spectroscopy qualitatively explains the concentration of defects (vacancy and voids) which are induced by Zn 2+ co-doping. The encryption strategies are provided using the photoluminescent chalk for high level information protection. We believe that the versatile, convenient and user-friendly strategy demonstrated herein will open a new insight for on-site information protection. ",

keywords = "Doppler broadening spectroscopy, Luminescent chalk, Photoluminescence, Positron annihilation spectroscopy, Ultrasonication route",

author = "Sudheendra, {H. S.} and Darshan, {G. P.} and Basavaraj, {R. B.} and Naik, {Yashwanth V.} and Premakumar, {H. B.} and H. Nagabhushana and Williams, {J. F.} and K. Hareesh and Kokila, {M. K.}",

year = "2019",

month = apr,

day = "1",

doi = "10.1016/j.optmat.2019.02.026",

language = "English",

volume = "90",

pages = "159--171",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}

Sudheendra, HS, Darshan, GP, Basavaraj, RB, Naik, YV, Premakumar, HB, Nagabhushana, H, Williams, JF, Hareesh, K & Kokila, MK 2019, 'Influence of Zn ²⁺ doping on the lattice defects and photoluminescence studies of Sr ₂ CeO ₄ :Eu ³⁺ nanophosphor: Applications for data encryption strategies', Optical Materials, vol. 90, pp. 159-171. https://doi.org/10.1016/j.optmat.2019.02.026

Influence of Zn ²⁺ doping on the lattice defects and photoluminescence studies of Sr ₂ CeO ₄ :Eu ³⁺ nanophosphor : Applications for data encryption strategies. / Sudheendra, H. S.; Darshan, G. P.; Basavaraj, R. B.; Naik, Yashwanth V.; Premakumar, H. B.; Nagabhushana, H.; Williams, J. F.; Hareesh, K.; Kokila, M. K.

In: Optical Materials, Vol. 90, 01.04.2019, p. 159-171.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Influence of Zn 2+ doping on the lattice defects and photoluminescence studies of Sr 2 CeO 4 :Eu 3+ nanophosphor

T2 - Applications for data encryption strategies

AU - Sudheendra, H. S.

AU - Darshan, G. P.

AU - Basavaraj, R. B.

AU - Naik, Yashwanth V.

AU - Premakumar, H. B.

AU - Nagabhushana, H.

AU - Williams, J. F.

AU - Hareesh, K.

AU - Kokila, M. K.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - In the present work, luminescent Sr 2 CeO 4 :Eu 3+ (5 mol %), Zn 2+ (0.25–3 mol %) nanophosphors were fabricated by the ultrasound irradiated sonochemical method. The samples prepared with 3 h ultrasound treatment exhibit well crystalline and single phase Sr 2 CeO 4 . The dumbbell shaped morphology of the prepared samples was elucidated from both SEM and TEM results. The energy band gap of the prepared samples was estimated and found to be in the range ∼3.18–3.63 eV. The incorporation of Zn 2+ greatly influences the defect and emission intensities, as revealed from photoluminescence and positron lifetime spectroscopy measurements. The enhancement in the photoluminescence emission intensity after Zn 2+ incorporation was observed, which may be due to the creation of defects and efficient energy transfer between Zn 2+ and Eu 3+ or defects that can act as emission centers. The positron lifetime spectroscopy qualitatively explains the concentration of defects (vacancy and voids) which are induced by Zn 2+ co-doping. The encryption strategies are provided using the photoluminescent chalk for high level information protection. We believe that the versatile, convenient and user-friendly strategy demonstrated herein will open a new insight for on-site information protection.

AB - In the present work, luminescent Sr 2 CeO 4 :Eu 3+ (5 mol %), Zn 2+ (0.25–3 mol %) nanophosphors were fabricated by the ultrasound irradiated sonochemical method. The samples prepared with 3 h ultrasound treatment exhibit well crystalline and single phase Sr 2 CeO 4 . The dumbbell shaped morphology of the prepared samples was elucidated from both SEM and TEM results. The energy band gap of the prepared samples was estimated and found to be in the range ∼3.18–3.63 eV. The incorporation of Zn 2+ greatly influences the defect and emission intensities, as revealed from photoluminescence and positron lifetime spectroscopy measurements. The enhancement in the photoluminescence emission intensity after Zn 2+ incorporation was observed, which may be due to the creation of defects and efficient energy transfer between Zn 2+ and Eu 3+ or defects that can act as emission centers. The positron lifetime spectroscopy qualitatively explains the concentration of defects (vacancy and voids) which are induced by Zn 2+ co-doping. The encryption strategies are provided using the photoluminescent chalk for high level information protection. We believe that the versatile, convenient and user-friendly strategy demonstrated herein will open a new insight for on-site information protection.

KW - Doppler broadening spectroscopy

KW - Luminescent chalk

KW - Photoluminescence

KW - Positron annihilation spectroscopy

KW - Ultrasonication route

UR - http://www.scopus.com/inward/record.url?scp=85062440893&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2019.02.026

DO - 10.1016/j.optmat.2019.02.026

M3 - Article

AN - SCOPUS:85062440893

VL - 90

SP - 159

EP - 171

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -

Sudheendra HS, Darshan GP, Basavaraj RB, Naik YV, Premakumar HB, Nagabhushana H et al. Influence of Zn ²⁺ doping on the lattice defects and photoluminescence studies of Sr ₂ CeO ₄ :Eu ³⁺ nanophosphor: Applications for data encryption strategies. Optical Materials. 2019 Apr 1;90:159-171. https://doi.org/10.1016/j.optmat.2019.02.026

Influence of Zn ²⁺ doping on the lattice defects and photoluminescence studies of Sr ₂ CeO ₄ :Eu ³⁺ nanophosphor: Applications for data encryption strategies

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