Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness

Wen Lei, Y.H. Chen, Y.L. Wang, B. Xu, X.L. Ye, Y.P. Zeng , Z.G. Wang

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)20-27
JournalJournal of Crystal Growth
Volume284
Publication statusPublished - 2005
Externally publishedYes

Cite this

Lei, W., Chen, Y. H., Wang, Y. L., Xu, B., Ye, X. L., Zeng , Y. P., & Wang, Z. G. (2005). Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness. Journal of Crystal Growth, 284, 20-27.